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Title: High Compositional Homogeneity of CdTe xSe 1-x Crystals Grown by the Bridgman Method

Abstract

We obtained high-quality CdTe xSe 1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd xZn 1-xTe (CdZnTe or CZT).

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [1];  [1];  [1];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Korea Univ., Seoul (South Korea)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1224177
Report Number(s):
BNL-108067-2015-JA
Journal ID: ISSN 2166-532X; NN2001
Grant/Contract Number:  
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 2; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, K., Lee, W., Tappero, R., Yang, G., Gul, R., and James, R. B. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method. United States: N. p., 2015. Web. doi:10.1063/1.4907250.
Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, K., Lee, W., Tappero, R., Yang, G., Gul, R., & James, R. B. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method. United States. doi:10.1063/1.4907250.
Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, K., Lee, W., Tappero, R., Yang, G., Gul, R., and James, R. B. Tue . "High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method". United States. doi:10.1063/1.4907250. https://www.osti.gov/servlets/purl/1224177.
@article{osti_1224177,
title = {High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method},
author = {Roy, U. N. and Bolotnikov, A. E. and Camarda, G. S. and Cui, Y. and Hossain, A. and Lee, K. and Lee, W. and Tappero, R. and Yang, G. and Gul, R. and James, R. B.},
abstractNote = {We obtained high-quality CdTexSe1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1-xTe (CdZnTe or CZT).},
doi = {10.1063/1.4907250},
journal = {APL Materials},
number = 2,
volume = 3,
place = {United States},
year = {Tue Feb 03 00:00:00 EST 2015},
month = {Tue Feb 03 00:00:00 EST 2015}
}

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