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Interband cascade (IC) photovoltaic (PV) architecture for PV devices

Patent ·
OSTI ID:1223690
; ; ; ; ;
A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Board of Regents University of Oklahoma (Norman, OK)
Patent Number(s):
9,166,084
Application Number:
13/024,203
OSTI ID:
1223690
Country of Publication:
United States
Language:
English

References (11)

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journal August 2009
Interband-cascade infrared photodetectors with superlattice absorbers journal March 2010
Theoretical limits of thermophotovoltaic solar energy conversion journal April 2003
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Distributed Feedback Mid-IR Interband Cascade Lasers at Thermoelectric Cooler Temperatures journal January 2007
Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells journal August 1980
Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices journal June 2009

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