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Title: Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides

Abstract

Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe 2 and WSe 2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo 1-xW xSe 2 alloys at low W concentrations. This surprising phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.

Authors:
 [1];  [1];  [1];  [2];  [3]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. National Renewable Energy Laboratory (NREL)
  3. Univ. of Utah, Salt Lake City, UT (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1222562
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 12; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Huang, Bing, Yoon, Mina, Sumpter, Bobby G, Wei, Su-Huai, and Liu, Feng. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides. United States: N. p., 2015. Web. doi:10.1103/PhysRevLett.115.126806.
Huang, Bing, Yoon, Mina, Sumpter, Bobby G, Wei, Su-Huai, & Liu, Feng. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides. United States. doi:10.1103/PhysRevLett.115.126806.
Huang, Bing, Yoon, Mina, Sumpter, Bobby G, Wei, Su-Huai, and Liu, Feng. Fri . "Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides". United States. doi:10.1103/PhysRevLett.115.126806.
@article{osti_1222562,
title = {Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides},
author = {Huang, Bing and Yoon, Mina and Sumpter, Bobby G and Wei, Su-Huai and Liu, Feng},
abstractNote = {Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe2 and WSe2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo1-xWxSe2 alloys at low W concentrations. This surprising phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.},
doi = {10.1103/PhysRevLett.115.126806},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 12,
volume = 115,
place = {United States},
year = {2015},
month = {9}
}

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