Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

doi:https://doi.org/10.2172/1221866

Title: Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

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Abstract

Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

Authors:

Tracy, Lisa A ^[1]; Reno, John L. ^[1]; Hargett, Terry W. ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Publication Date:: 2015-09-01

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1221866

Report Number(s):: SAND2015-8132
604048

DOE Contract Number:: AC04-94AL85000

Resource Type:: Technical Report

Country of Publication:: United States

Language:: English

Citation Formats


                    Tracy, Lisa A, Reno, John L., and Hargett, Terry W. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures.  United States: N. p., 2015. 
        Web.  doi:10.2172/1221866.

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                    Tracy, Lisa A, Reno, John L., & Hargett, Terry W. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures.  United States.  https://doi.org/10.2172/1221866

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                    Tracy, Lisa A, Reno, John L., and Hargett, Terry W. Tue .  
        "Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures".  United States.  https://doi.org/10.2172/1221866.  https://www.osti.gov/servlets/purl/1221866.

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@article{osti_1221866,

  title        = {Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures},

  author       = {Tracy, Lisa A and Reno, John L. and Hargett, Terry W.},

  abstractNote = {Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank},

  doi          = {10.2172/1221866},

  url          = {https://www.osti.gov/biblio/1221866},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {9}

}

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