Spectroscopic Determination of the Bandgap Crossover Composition in MBE-Grown AlxGa1-xAs

Fluegel, B.; Alberi, K.; Reno, J.; Mascarenhas, A.

doi:10.7567/JJAP.54.042402

Title: Spectroscopic Determination of the Bandgap Crossover Composition in MBE-Grown AlxGa1-xAs

Journal Article · Wed Apr 01 00:00:00 EDT 2015 · Japanese Journal of Physics

DOI:https://doi.org/10.7567/JJAP.54.042402· OSTI ID:1220667

Fluegel, B.; Alberi, K.; Reno, J.; Mascarenhas, A.

Cite

Export

Save

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Contributing Organization:: Sandia National Laboratories, Albuquerque, New Mexico

OSTI ID:: 1220667

Report Number(s):: NREL/JA-5K00-63469

Journal Information:: Japanese Journal of Physics, Vol. 54, Issue 4

Country of Publication:: United States

Language:: English

References (13)

Photoluminescence of Al _x Ga _1-x As near the Γ-X crossover Oelgart, G.; Schwabe, R.; Heider, M. Semiconductor Science and Technology, Vol. 2, Issue 7 https://doi.org/10.1088/0268-1242/2/7/015	journal	July 1987
Dependence of the Al _x Ga _{1− x} As band edge on alloy composition based on the absolute measurement of x Kuech, T. F.; Wolford, D. J.; Potemski, R. Applied Physics Letters, Vol. 51, Issue 7 https://doi.org/10.1063/1.98380	journal	August 1987
Direct-energy-gap dependence on Al concentration in ${Al}_{x}$ ${Ga}_{1 - x}$ As Bosio, C.; Staehli, J. L.; Guzzi, M. Physical Review B, Vol. 38, Issue 5 https://doi.org/10.1103/PhysRevB.38.3263	journal	August 1988
Indirect-energy-gap dependence on Al concentration in ${Al}_{x}$ ${Ga}_{1 - x}$ As alloys Guzzi, M.; Grilli, E.; Oggioni, S. Physical Review B, Vol. 45, Issue 19 https://doi.org/10.1103/PhysRevB.45.10951	journal	May 1992
Photoluminescence of Al _x Ga _{1− x} As alloys Pavesi, Lorenzo; Guzzi, Mario Journal of Applied Physics, Vol. 75, Issue 10 https://doi.org/10.1063/1.355769	journal	May 1994
Resonant Inelastic Light Scattering Investigation of Low-Lying Gapped Excitations in the Quantum Fluid at $ν = 5 / 2$ Wurstbauer, U.; West, K. W.; Pfeiffer, L. N. Physical Review Letters, Vol. 110, Issue 2 https://doi.org/10.1103/PhysRevLett.110.026801	journal	January 2013
Precise Determination of the Direct–Indirect Band Gap Energy Crossover Composition in Al _x Ga _{1- x} As Beaton, Daniel A.; Alberi, Kirstin; Fluegel, Brian Applied Physics Express, Vol. 6, Issue 7 https://doi.org/10.7567/APEX.6.071201	journal	July 2013
Defect‐related emissions in photoluminescence spectra of Al _x Ga ₁ _{− x} As grown by molecular beam epitaxy Mihara, M.; Nomura, Y.; Mannoh, M. Journal of Applied Physics, Vol. 55, Issue 10 https://doi.org/10.1063/1.332931	journal	May 1984
Photoluminescence properties of Al _x Ga _1-x As and an investigation of a new 1.951 eV transition Lochs, H. G. M.; Olsthoorn, S. M.; Huijgen, T. P. Journal of Physics: Condensed Matter, Vol. 3, Issue 37 https://doi.org/10.1088/0953-8984/3/37/010	journal	September 1991
Low‐temperature photoluminescence in Al _x Ga _{1− x} As grown by molecular beam epitaxy Reynolds, D. C.; Bajaj, K. K.; Litton, C. W. Journal of Applied Physics, Vol. 58, Issue 4 https://doi.org/10.1063/1.336054	journal	August 1985
Luminescence and Excitation Spectra of Exciton Emission in GaAs Heim, U.; Hiesinger, P. physica status solidi (b), Vol. 66, Issue 2 https://doi.org/10.1002/pssb.2220660208	journal	December 1974
Effect of biaxial strain on exciton transitions of Al _x Ga _{1− x} As epitaxial layers on (001) GaAs substrates Logothetidis, S.; Cardona, M.; Tapfer, L. Journal of Applied Physics, Vol. 66, Issue 5 https://doi.org/10.1063/1.344304	journal	September 1989
Low-temperature optical absorption in ${Al}_{x}$ ${Ga}_{1 - x}$ As grown by molecular-beam epitaxy Pearah, P. J.; Masselink, W. T.; Klem, J. Physical Review B, Vol. 32, Issue 6 https://doi.org/10.1103/PhysRevB.32.3857	journal	September 1985

Cited By (1)

Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures Barkissy, D.; Nafidi, A.; Boutramine, A. Journal of Low Temperature Physics, Vol. 182, Issue 5-6 https://doi.org/10.1007/s10909-015-1437-0	journal	January 2016

Similar Records

Spectroscopic determination of the bandgap crossover composition in MBE-grown Al_xGa_1-xAs

Journal Article · Thu Mar 12 00:00:00 EDT 2015 · Japanese Journal of Applied Physics · OSTI ID:1220667

Fluegel, Brian; Alberi, Kirstin; Reno, John; +1 more

Precise determination of the direct-indirect band gap energy cross-over composition in AlxGa1-xAs.

Journal Article · Wed May 01 00:00:00 EDT 2013 · Japanese Journal of Applied Physics · OSTI ID:1220667

Reno, John L.; Beaton, D. A.; Alberi, K.; +2 more

Magnetic Field-Induced Direct-Indirect Crossover in AlxGa1-xAs

Journal Article · Sat Nov 01 00:00:00 EDT 2014 · Applied Physics Express · OSTI ID:1220667

Alberi, K.; Mialitsin, A. V.; Fluegel, B.; +3 more

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AlGaAs
photoluminescence

Title: Spectroscopic Determination of the Bandgap Crossover Composition in MBE-Grown AlxGa1-xAs

Citation Formats

References (13)

Cited By (1)

Similar Records

Related Subjects