skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High Aspect Ratio Electrodeposited Ni/Au Contacts for GaAs-Based III-V Concentrator Solar Cells

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1220593
Report Number(s):
NREL/JA-5J00-61530
Resource Type:
Journal Article
Resource Relation:
Journal Name: Progress in Photovoltaics: Research and Applications; Journal Volume: 23; Journal Issue: 5
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; GaAs; electro-deposition; III–V; concentrator; gold; nickel

Citation Formats

Ward, J. S., Duda, A., Friedman, D. J., Geisz, J., McMahon, W., and Young, M. High Aspect Ratio Electrodeposited Ni/Au Contacts for GaAs-Based III-V Concentrator Solar Cells. United States: N. p., 2015. Web. doi:10.1002/pip.2490.
Ward, J. S., Duda, A., Friedman, D. J., Geisz, J., McMahon, W., & Young, M. High Aspect Ratio Electrodeposited Ni/Au Contacts for GaAs-Based III-V Concentrator Solar Cells. United States. doi:10.1002/pip.2490.
Ward, J. S., Duda, A., Friedman, D. J., Geisz, J., McMahon, W., and Young, M. Fri . "High Aspect Ratio Electrodeposited Ni/Au Contacts for GaAs-Based III-V Concentrator Solar Cells". United States. doi:10.1002/pip.2490.
@article{osti_1220593,
title = {High Aspect Ratio Electrodeposited Ni/Au Contacts for GaAs-Based III-V Concentrator Solar Cells},
author = {Ward, J. S. and Duda, A. and Friedman, D. J. and Geisz, J. and McMahon, W. and Young, M.},
abstractNote = {},
doi = {10.1002/pip.2490},
journal = {Progress in Photovoltaics: Research and Applications},
number = 5,
volume = 23,
place = {United States},
year = {Fri May 01 00:00:00 EDT 2015},
month = {Fri May 01 00:00:00 EDT 2015}
}
  • This report deals with research and development on materials pertinent to the multigap approach to high efficiency solar cells. Initial investigations were confined to the two-gap version, and most of the work was concerned with the InGaAs (0.73 eV) and Ge (0.67 eV) semiconductors that potentially could be used as a lower junction cell to capture the radiation passing through an AlGaAs/GaAs (1.425 eV) upper cell. In addition, some work leading to the realization of the optimum bandgap configuration (1.65 and 1.15 eV) for an optimized two-junction tandem solar cell is reported.
  • Homoepitaxial selective growth of a GaAs nanoscale, high-aspect ratio, one-dimensional (1D) grating with vertical facets is reported. For a pattern direction along [110], the kinetics of faceting in selective molecular-beam epitaxy (MBE) induce (110)-type facets vertical to a GaAs(001) substrate near the boundary between an SiO{sub 2} mask and an open substrate area. On a 1.25-{mu}m period, 1D stripe, SiO{sub 2}-patterned GaAs(001) substrate with an opening width of {approx}300 nm, vertical faceting results in a grating structure consisting of 2.8-{mu}m-high, 820-nm-wide features. Kinetics of faceting in selective MBE is explained as a result of the minimization of total surface energy.
  • Large-aspect-ratio grains are needed in polycrystalline thin-film solar cells for reduced charge recombination at grain boundaries; however, the grain size in organolead trihalide perovskite (OTP) films is generally limited by the film thickness. Here we report the growth of OTP grains with high average aspect ratio of 2.3–7.9 on a wide range of non-wetting hole transport layers (HTLs), which increase nucleus spacing by suppressing heterogeneous nucleation and facilitate grain boundary migration in grain growth by imposing less drag force. The reduced grain boundary area and improved crystallinity dramatically reduce the charge recombination in OTP thin films to the level inmore » OTP single crystals. Combining the high work function of several HTLs, a high stabilized device efficiency of 18.3% in low-temperature-processed planar-heterojunction OTP devices under 1 sun illumination is achieved. As a result, this simple method in enhancing OTP morphology paves the way for its application in other optoelectronic devices for enhanced performance.« less
  • Efficiencies of 25% have been obtained with 1-cm-diam AlGaAs/GaAs heteroface concentrator solar cells utilizing an ultrathin AlGaAs window layer design. A low specific resistance (<0.005 ..cap omega.. cm/sup 2/) Ohmic contact is achieved by direct contact to the p-GaAs active layer. Liquid phase epitaxy has been developed to grow <500-A thick window layers on large-area (3.3 x 3.3 cm) GaAs substrates. Four 1-cm-diam cells are produced from each wafer and demonstrate the potential for larger-scale production.