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Title: Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy

Abstract

Metal organic vapour phase epitaxy (GaAs)1-x(Ge2)x alloy layers, 0<x<0.22, were grown at temperatures between 640 and 690 C, on vicinal (001) GaAs substrates. Phase separation occurred in all the layers. The phase-separated microstructure changed with alloy composition, growth temperature, and substrate orientation. In x {approx} 0.1 layers grown at 640 C, Ge segregation occurred on {l_brace}115{r_brace}B planes associated with a {l_brace}115{r_brace}B surface faceting. Increase in growth temperature led to the formation of large, (001)-oriented, irregular-shaped platelets of Ge-rich material. Growth on {l_brace}115{r_brace}B substrates resulted in a ''natural superlattice'' of GaAs/Ge along the growth direction.

Authors:
; ; ; ; ;  [1];  [2]
  1. (National Renewable Energy Laboratory)
  2. (Spire Corporation)
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
12158
Report Number(s):
NREL/CP-520-26319
TRN: US200309%%237
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Conference
Resource Relation:
Conference: Microscopy of Semiconducting Materials XI, Oxford (GB), 03/22/1999--03/25/1999; Other Information: Supercedes report DE00012158; PBD: 13 Sep 1999; PBD: 13 Sep 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ALLOYS; EPITAXY; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; SEGREGATION; SUBSTRATES; MULTI-JUNCTION CELLS; GAAS; PHASE SEPARATION; ALLOY LAYERS; MOVPE; BAND-GAP NARROWING; SOLAR CELLS; GE; ANTIPHASE DOMAINS; GROWTH TEMPERATURE; SUPERLATTICE

Citation Formats

Norman, A. G., Olson, J. M., Geisz, J. F., Moutinho, H. R., Mason, A., Al-Jassim, M. M., and Vernon, S. M. Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy. United States: N. p., 1999. Web.
Norman, A. G., Olson, J. M., Geisz, J. F., Moutinho, H. R., Mason, A., Al-Jassim, M. M., & Vernon, S. M. Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy. United States.
Norman, A. G., Olson, J. M., Geisz, J. F., Moutinho, H. R., Mason, A., Al-Jassim, M. M., and Vernon, S. M. Mon . "Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy". United States. https://www.osti.gov/servlets/purl/12158.
@article{osti_12158,
title = {Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy},
author = {Norman, A. G. and Olson, J. M. and Geisz, J. F. and Moutinho, H. R. and Mason, A. and Al-Jassim, M. M. and Vernon, S. M.},
abstractNote = {Metal organic vapour phase epitaxy (GaAs)1-x(Ge2)x alloy layers, 0<x<0.22, were grown at temperatures between 640 and 690 C, on vicinal (001) GaAs substrates. Phase separation occurred in all the layers. The phase-separated microstructure changed with alloy composition, growth temperature, and substrate orientation. In x {approx} 0.1 layers grown at 640 C, Ge segregation occurred on {l_brace}115{r_brace}B planes associated with a {l_brace}115{r_brace}B surface faceting. Increase in growth temperature led to the formation of large, (001)-oriented, irregular-shaped platelets of Ge-rich material. Growth on {l_brace}115{r_brace}B substrates resulted in a ''natural superlattice'' of GaAs/Ge along the growth direction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}

Conference:
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