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Title: CHAPTER 3:Thin-Film CdTe Photovoltaic Solar Cell Devices

Authors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Contributing Org.:
University of Delaware, Newark, Delaware; University of South Florida, Tampa, Florida
OSTI Identifier:
1214974
Report Number(s):
NREL/CH-5K00-61267
Resource Type:
Book
Resource Relation:
Journal Name: Advanced Concepts in Photovoltaics; Related Information: RSC Energy and Environment Series No. 11; Nozik, Arthur J., Conibeer, Gavin, and Beard, Matthew C., eds.
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CdTe; Buffer Layers; Devices; CdTe History

Citation Formats

Gessert, Timothy, McCandless, Brian, and Ferekides, Chris. CHAPTER 3:Thin-Film CdTe Photovoltaic Solar Cell Devices. United States: N. p., 2014. Web. doi:10.1039/9781849739955-00061.
Gessert, Timothy, McCandless, Brian, & Ferekides, Chris. CHAPTER 3:Thin-Film CdTe Photovoltaic Solar Cell Devices. United States. doi:10.1039/9781849739955-00061.
Gessert, Timothy, McCandless, Brian, and Ferekides, Chris. Mon . "CHAPTER 3:Thin-Film CdTe Photovoltaic Solar Cell Devices". United States. doi:10.1039/9781849739955-00061.
@article{osti_1214974,
title = {CHAPTER 3:Thin-Film CdTe Photovoltaic Solar Cell Devices},
author = {Gessert, Timothy and McCandless, Brian and Ferekides, Chris},
abstractNote = {},
doi = {10.1039/9781849739955-00061},
journal = {Advanced Concepts in Photovoltaics},
number = ,
volume = ,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}

Book:
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  • The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.
  • Thin film solar cells based on Cu(In,Ga)Se{sub 2} films were fabricated, and their junction and photovoltaic properties were investigated. Ga in CuInSe{sub 2} thin films formed by so-called bilayer process was incorporated homogeneously. The fabricated cell structure was glass/Mo/Cu(In,Ga)Se{sub 2}/CdS/ZnO/ITO(/MgF{sub 2}). The incorporations of Ga into CuInSe{sub 2} films up to about 20 mol% improved the photovoltaic performance. From the study of photoluminescence, capacitance-voltage and current-voltage characteristics, it was clarified that the incorporation of Ga not only widened the bandgap energy, but also played an important role in the effect which yield hole concentration. The best cell with an AR-coatingmore » (MgF{sub 2}) exhibited an efficiency of 15.2%; Jsc = 33.9 mA/cm{sup 2}, Voc = 0.616 V, FF = 0.730. The device performance can be improved by the development of the film with higher hole concentration, keeping the crystalline quality.« less
  • The special attributes of the CuIn{sub 3}Se{sub 5} material are exploited for an absorber layer in a new thin-film photovoltaic (PV) cell. Cu{sub X}In{sub Y}Se{sub Z} thin films with x {approximately} 11% are synthesized by co-evaporation or sequential evaporation. An electrochemical approach, first developed for CuInSe{sub 2}, is employed to construct an n-CuIn{sub 3}Se{sub 5}/p-CuISe{sub 3} heterojunction. This approach leads to a remarkably uniform, clean np-heterointerface and a rough surface conducive to light trapping. EPMA, SIMS profiles and XRD analysis examine the CuIn{sub 3}Se{sub 5} films and the CuISe{sub 3} overlayer. EBIC and I-V analysis investigate the formation of anmore » electrically active n-CuIn{sub 3}Se{sub 5}/p-CuISe{sub 3} junction.« less
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