skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Abstract

The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Inventors:
;
Publication Date:
Research Org.:
President And Fellows Of Harvard College, Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1214588
Patent Number(s):
9,136,146
Application Number:
14/073,460
Assignee:
President And Fellows Of Harvard College (Cambridge, MA) GFO
DOE Contract Number:  
FC36-01GO11053
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Nov 06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mazur, Eric, and Shen, Mengyan. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate. United States: N. p., 2015. Web.
Mazur, Eric, & Shen, Mengyan. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate. United States.
Mazur, Eric, and Shen, Mengyan. Tue . "Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate". United States. doi:. https://www.osti.gov/servlets/purl/1214588.
@article{osti_1214588,
title = {Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate},
author = {Mazur, Eric and Shen, Mengyan},
abstractNote = {The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2015},
month = {Tue Sep 15 00:00:00 EDT 2015}
}

Patent:

Save / Share:

Works referenced in this record:

Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask
journal, March 2003

  • Shen, M. Y.; Crouch, C. H.; Carey, J. E.
  • Applied Physics Letters, Vol. 82, Issue 11, p. 1715-1717
  • DOI: 10.1063/1.1561162

Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses
journal, March 2003

  • Younkin, R.; Carey, J. E.; Mazur, E.
  • Journal of Applied Physics, Vol. 93, Issue 5, p. 2626-2629
  • DOI: 10.1063/1.1545159

Visible luminescence from silicon surfaces microstructured in air
journal, September 2002

  • Wu, C.; Crouch, C. H.; Zhao, L.
  • Applied Physics Letters, Vol. 81, Issue 11, p. 1999-2001
  • DOI: 10.1063/1.1504868

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon
journal, March 2004

  • Crouch, C. H.; Carey, J. E.; Warrender, J. M.
  • Applied Physics Letters, Vol. 84, Issue 11, p. 1850-1852
  • DOI: 10.1063/1.1667004

Near-unity below-band-gap absorption by microstructured silicon
journal, March 2001

  • Wu, C.; Crouch, C. H.; Zhao, L.
  • Applied Physics Letters, Vol. 78, Issue 13, p. 1850-1852
  • DOI: 10.1063/1.1358846

Microstructuring of silicon with femtosecond laser pulses
journal, September 1998

  • Her, Tsing-Hua; Finlay, Richard J.; Wu, Claudia
  • Applied Physics Letters, Vol. 73, Issue 12, p. 1673-1675
  • DOI: 10.1063/1.122241

Temperature dependence of photoluminescence in noncrystalline silicon
conference, June 2004

  • Serpenguzel, Ali; Bilici, Temel; Inanc, Ibrahim
  • Integrated Optoelectronic Devices 2004: Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII, Vol. 5349
  • DOI: 10.1117/12.529549

Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation
journal, July 1996

  • Sánchez, F.; Morenza, J. L.; Aguiar, R.
  • Applied Physics Letters, Vol. 69, Issue 5, p. 620-622
  • DOI: 10.1063/1.117926

Surface microstructuring and long-range ordering of silicon nanoparticles
journal, May 2002

  • Fowlkes, J. D.; Pedraza, A. J.; Blom, D. A.
  • Applied Physics Letters, Vol. 80, Issue 20, p. 3799-3801
  • DOI: 10.1063/1.1480106

Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation
journal, April 1999

  • Pedraza, A. J.; Fowlkes, J. D.; Lowndes, D. H.
  • Applied Physics Letters, Vol. 74, Issue 16, p. 2322-2324
  • DOI: 10.1063/1.123838

Effect of polarization on femtosecond laser pulses structuring silicon surface
journal, February 2006


Modeling of the spectral response of PIN photodetectors Impact of exposed zone thickness, surface recombination velocity and trap concentration
journal, February 2004