Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Mazur, Eric; Shen, Mengyan

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Patent · 15 September 2015

OSTI ID:1214588

Mazur, Eric; Shen, Mengyan

The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

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Research Organization:: President And Fellows Of Harvard College, Cambridge, MA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: ;

Other Award/Contract Number:: FC36-01GO11053

Assignee:: President And Fellows Of Harvard College (Cambridge, MA)

Patent Number(s):: 9,136,146

Application Number:: 14/073,460

OSTI ID:: 1214588

Country of Publication:: United States

Language:: English

References (19)

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