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Title: Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

Abstract

The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ion lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1214003
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Iberi, Vighter O., Vlassiouk, Ivan V., Zhang, X. -G., Matola, Brad R., Linn, Allison R., Joy, David Charles, and Adam Justin Rondinone. Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy. United States: N. p., 2015. Web. doi:10.1038/srep11952.
Iberi, Vighter O., Vlassiouk, Ivan V., Zhang, X. -G., Matola, Brad R., Linn, Allison R., Joy, David Charles, & Adam Justin Rondinone. Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy. United States. doi:10.1038/srep11952.
Iberi, Vighter O., Vlassiouk, Ivan V., Zhang, X. -G., Matola, Brad R., Linn, Allison R., Joy, David Charles, and Adam Justin Rondinone. Tue . "Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy". United States. doi:10.1038/srep11952. https://www.osti.gov/servlets/purl/1214003.
@article{osti_1214003,
title = {Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy},
author = {Iberi, Vighter O. and Vlassiouk, Ivan V. and Zhang, X. -G. and Matola, Brad R. and Linn, Allison R. and Joy, David Charles and Adam Justin Rondinone},
abstractNote = {The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ion lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.},
doi = {10.1038/srep11952},
journal = {Scientific Reports},
number = ,
volume = 5,
place = {United States},
year = {Tue Jul 07 00:00:00 EDT 2015},
month = {Tue Jul 07 00:00:00 EDT 2015}
}

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Cited by: 14 works
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Works referenced in this record:

Tuning the Graphene Work Function by Electric Field Effect
journal, October 2009

  • Yu, Young-Jun; Zhao, Yue; Ryu, Sunmin
  • Nano Letters, Vol. 9, Issue 10, p. 3430-3434
  • DOI: 10.1021/nl901572a

Graphene nano-ribbon electronics
journal, December 2007

  • Chen, Zhihong; Lin, Yu-Ming; Rooks, Michael J.
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 40, Issue 2, p. 228-232
  • DOI: 10.1016/j.physe.2007.06.020