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Title: Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Abstract

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ≥0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3]
  1. Univ. of Utah, Salt Lake City, UT (United States)
  2. Beijing Institute of Technology, Beijing (China)
  3. Univ. of Utah, Salt Lake City, UT (United States); Collaborative Innovation Center of Quantum Matter, Beijing (China)
Publication Date:
Research Org.:
Univ. of Utah, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1213478
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 4; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Zhou, Miao, Ming, Wenmei, Liu, Zheng, Wang, Zhengfei, Yao, Yugui, and Liu, Feng. Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling. United States: N. p., 2014. Web. doi:10.1038/srep07102.
Zhou, Miao, Ming, Wenmei, Liu, Zheng, Wang, Zhengfei, Yao, Yugui, & Liu, Feng. Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling. United States. https://doi.org/10.1038/srep07102
Zhou, Miao, Ming, Wenmei, Liu, Zheng, Wang, Zhengfei, Yao, Yugui, and Liu, Feng. 2014. "Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling". United States. https://doi.org/10.1038/srep07102. https://www.osti.gov/servlets/purl/1213478.
@article{osti_1213478,
title = {Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling},
author = {Zhou, Miao and Ming, Wenmei and Liu, Zheng and Wang, Zhengfei and Yao, Yugui and Liu, Feng},
abstractNote = {For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ≥0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.},
doi = {10.1038/srep07102},
url = {https://www.osti.gov/biblio/1213478}, journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 4,
place = {United States},
year = {2014},
month = {11}
}

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Cited by: 35 works
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