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Title: Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation

Abstract

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1];  [3];  [1];  [3]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Korea Univ., Seoul (Korea)
  3. Fisk Univ., Nashville, TN (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1213356
Report Number(s):
BNL-108049-2015-JA
Journal ID: ISSN 2166-532X; AMPADS; NN2001
Grant/Contract Number:  
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 4; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; point defects characterization; cadmium telluride selenide (CdTeSe); radiation detectors; Traveling Heater Method (THM)

Citation Formats

Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, W., Yang, G., Burger, A., James, R. B., and Cui, Y. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation. United States: N. p., 2015. Web. doi:10.1063/1.4917270.
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, W., Yang, G., Burger, A., James, R. B., & Cui, Y. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation. United States. https://doi.org/10.1063/1.4917270
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, W., Yang, G., Burger, A., James, R. B., and Cui, Y. 2015. "Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation". United States. https://doi.org/10.1063/1.4917270. https://www.osti.gov/servlets/purl/1213356.
@article{osti_1213356,
title = {Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation},
author = {Gul, R. and Roy, U. N. and Bolotnikov, A. E. and Camarda, G. S. and Cui, Y. and Hossain, A. and Lee, W. and Yang, G. and Burger, A. and James, R. B. and Cui, Y.},
abstractNote = {We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.},
doi = {10.1063/1.4917270},
url = {https://www.osti.gov/biblio/1213356}, journal = {APL Materials},
issn = {2166-532X},
number = 4,
volume = 3,
place = {United States},
year = {Wed Apr 15 00:00:00 EDT 2015},
month = {Wed Apr 15 00:00:00 EDT 2015}
}

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Cited by: 7 works
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Works referenced in this record:

Systematic modelling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation
journal, February 1998


Recent Progress In Lattice Matched Substrates For HgCdTe EPITAXY
conference, September 1989


Cadmium zinc telluride and its use as a nuclear radiation detector material
journal, April 2001


Growth of CdTexSe1−x from a Te-rich solution for applications in radiation detection
journal, January 2014


Point Defects in CdZnTe Crystals Grown by Different Techniques
journal, February 2011


Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation
journal, January 2008


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