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Title: High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

Abstract

This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushedmore » to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [2];  [3];  [3];  [3];  [3];  [3]
  1. APEI, Inc.
  2. ORNL
  3. University of Arkansas
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
Work for Others (WFO)
OSTI Identifier:
1213317
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Knoxville, TN, USA, 20141013, 20141015
Country of Publication:
United States
Language:
English

Citation Formats

Whitaker, Mr. Bret, Cole, Mr. Zach, Passmore, Mr. Brandon, Martin, Daniel, Mcnutt, Tyler, Lostetter, Dr. Alex, Ericson, Milton Nance, Frank, Steven Shane, Britton Jr, Charles L, Marlino, Laura D, Mantooth, Alan, Francis, Dr. Matt, Lamichhane, Ranjan, Shepherd, Dr. Paul, and Glover, Dr. Michael. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications. United States: N. p., 2014. Web.
Whitaker, Mr. Bret, Cole, Mr. Zach, Passmore, Mr. Brandon, Martin, Daniel, Mcnutt, Tyler, Lostetter, Dr. Alex, Ericson, Milton Nance, Frank, Steven Shane, Britton Jr, Charles L, Marlino, Laura D, Mantooth, Alan, Francis, Dr. Matt, Lamichhane, Ranjan, Shepherd, Dr. Paul, & Glover, Dr. Michael. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications. United States.
Whitaker, Mr. Bret, Cole, Mr. Zach, Passmore, Mr. Brandon, Martin, Daniel, Mcnutt, Tyler, Lostetter, Dr. Alex, Ericson, Milton Nance, Frank, Steven Shane, Britton Jr, Charles L, Marlino, Laura D, Mantooth, Alan, Francis, Dr. Matt, Lamichhane, Ranjan, Shepherd, Dr. Paul, and Glover, Dr. Michael. Wed . "High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications". United States. https://www.osti.gov/servlets/purl/1213317.
@article{osti_1213317,
title = {High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications},
author = {Whitaker, Mr. Bret and Cole, Mr. Zach and Passmore, Mr. Brandon and Martin, Daniel and Mcnutt, Tyler and Lostetter, Dr. Alex and Ericson, Milton Nance and Frank, Steven Shane and Britton Jr, Charles L and Marlino, Laura D and Mantooth, Alan and Francis, Dr. Matt and Lamichhane, Ranjan and Shepherd, Dr. Paul and Glover, Dr. Michael},
abstractNote = {This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {1}
}

Conference:
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