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Title: Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

Authors:
; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); EFRC for Solid State Lighting Science (SSLS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1210766
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, optics, synthesis (novel materials)

Citation Formats

Aagesen, L. K., Coltrin, Michael E., Han, Jung, and Thornton, Katsuyo. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries. United States: N. p., 2015. Web. doi:10.1063/1.4921053.
Aagesen, L. K., Coltrin, Michael E., Han, Jung, & Thornton, Katsuyo. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries. United States. doi:10.1063/1.4921053.
Aagesen, L. K., Coltrin, Michael E., Han, Jung, and Thornton, Katsuyo. Thu . "Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries". United States. doi:10.1063/1.4921053.
@article{osti_1210766,
title = {Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries},
author = {Aagesen, L. K. and Coltrin, Michael E. and Han, Jung and Thornton, Katsuyo},
abstractNote = {},
doi = {10.1063/1.4921053},
journal = {Journal of Applied Physics},
number = ,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}