Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Yang, Nuo; Luo, Tengfei; Esfarjani, Keivan; Henry, Asegun; Tian, Zhiting; Shiomi, Junichiro; Chalopin, Yann; Li, Baowen; Chen, Gang

doi:10.1166/jctn.2015.3710

Title: Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Journal Article · Sun Feb 01 00:00:00 EST 2015 · Journal of Computational and Theoretical Nanoscience

DOI:https://doi.org/10.1166/jctn.2015.3710· OSTI ID:1210629

Yang, Nuo; Luo, Tengfei; Esfarjani, Keivan; Henry, Asegun; Tian, Zhiting; Shiomi, Junichiro; Chalopin, Yann; Li, Baowen; Chen, Gang

Cite

Export

Save

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: SC0001299; FG02-09ER46577

OSTI ID:: 1210629

Journal Information:: Journal of Computational and Theoretical Nanoscience, Vol. 12; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute

Country of Publication:: United States

Language:: English

Cited By (11)

Thermal Transport in 2D Semiconductors—Considerations for Device Applications Zhao, Yunshan; Cai, Yongqing; Zhang, Lifa Advanced Functional Materials, Vol. 30, Issue 8 https://doi.org/10.1002/adfm.201903929	journal	August 2019
Thermal conduction across the one-dimensional interface between a MoS2 monolayer and metal electrode Liu, Xiangjun; Zhang, Gang; Zhang, Yong-Wei Nano Research, Vol. 9, Issue 8 https://doi.org/10.1007/s12274-016-1124-8	journal	June 2016
Influence of Deposition Techniques on the Thermal Boundary Resistance of Aluminum Thin-Films Suk, Myung Eun; Kim, Yun Young International Journal of Precision Engineering and Manufacturing, Vol. 20, Issue 8 https://doi.org/10.1007/s12541-019-00160-7	journal	May 2019
First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements Sun, Zhehao; Yuan, Kunpeng; Zhang, Xiaoliang Physical Chemistry Chemical Physics, Vol. 21, Issue 11 https://doi.org/10.1039/c8cp07516f	journal	January 2019
Design of phosphorene/graphene heterojunctions for high and tunable interfacial thermal conductance Liu, Xiangjun; Gao, Junfeng; Zhang, Gang Nanoscale, Vol. 10, Issue 42 https://doi.org/10.1039/c8nr06110f	journal	January 2018
Phonon transport at interfaces: Determining the correct modes of vibration Gordiz, Kiarash; Henry, Asegun Journal of Applied Physics, Vol. 119, Issue 1 https://doi.org/10.1063/1.4939207	journal	January 2016
Molecular dynamics study of the interfacial thermal conductance of multi-walled carbon nanotubes and van der Waals force induced deformation Rong, Qingyuan; Shao, Cheng; Bao, Hua Journal of Applied Physics, Vol. 121, Issue 5 https://doi.org/10.1063/1.4975032	journal	February 2017
Thermal boundary resistance measurement and analysis across SiC/SiO ₂ interface Deng, Shichen; Xiao, Chengdi; Yuan, Jiale Applied Physics Letters, Vol. 115, Issue 10 https://doi.org/10.1063/1.5111157	journal	September 2019
A formalism for calculating the modal contributions to thermal interface conductance Gordiz, Kiarash; Henry, Asegun New Journal of Physics, Vol. 17, Issue 10 https://doi.org/10.1088/1367-2630/17/10/103002	journal	September 2015
Impact of bonding energy on thermal conductance of metal/graphene/metal interfaces Zhang, Chunwei; Zhou, Hai; Xia, Siwei Materials Research Express, Vol. 6, Issue 8 https://doi.org/10.1088/2053-1591/ab185a	journal	May 2019
Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface Deng, Shichen; Xiao, Chengdi; Yuan, Jiale arXiv https://doi.org/10.48550/arxiv.1905.08570	text	January 2019

Similar Records

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Journal Article · Sun Feb 01 00:00:00 EST 2015 · Journal of Computational and Theoretical Nanoscience · OSTI ID:1210629

Yang, Nuo; Luo, Tengfei; Esfarjani, Keivan; +6 more

Thermal Conductance at Atomically Clean and Disordered Silicon/Aluminum Interfaces: A Molecular Dynamics Simulation Study

Journal Article · Sat Sep 01 00:00:00 EDT 2012 · Journal of Applied Physics · OSTI ID:1210629

Choi, Woon Ih.; Kim, Kwisseon; Narumanchi, Sreekant

Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics

Journal Article · Tue May 01 00:00:00 EDT 2012 · Physical Review. B, Condensed Matter and Materials Physics · OSTI ID:1210629

Chalopin, Y.; Esfarjani, K.; Henry, A.; +2 more

Related Subjects

solar (photovoltaic)
solar (thermal)
solid state lighting
phonons
thermal conductivity
thermoelectric
defects
mechanical behavior
charge transport
spin dynamics
materials and chemistry by design
optics
synthesis (novel materials)
synthesis (self-assembly)
synthesis (scalable processing)

Title: Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Citation Formats

Cited By (11)

Similar Records

Related Subjects