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Title: High electrical conductivity in out of plane direction of electrodeposited Bi 2Te 3 films

Abstract

The out of plane electrical conductivity of highly anisotropic Bi 2Te 3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi 2Te 3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. In conclusion, a high electrical conductivity of (3.2 ± 0.4) · 10 5S/m is reported along the out of plane direction for Bi 2Te 3 films highly oriented in the [1 1 0] direction.

Authors:
 [1];  [1];  [2];  [2];  [3];  [1]
  1. IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Madrid (Spain)
  2. Ciudad Univ. de Cantoblanco, Madrid (Spain)
  3. Rensselaer Polytechnic Inst., Troy, NY (United States)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1210110
Alternate Identifier(s):
OSTI ID: 1420650; OSTI ID: 1459182
Grant/Contract Number:  
SC0001299
Resource Type:
Journal Article: Published Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 8; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Rojo, Miguel Munoz, Manzano, Cristina V., Granados, Daniel, Osorio, M. R., Borca-Tasciuc, Theodorian, and Martin-Gonzalez, Marisol. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films. United States: N. p., 2015. Web. doi:10.1063/1.4928863.
Rojo, Miguel Munoz, Manzano, Cristina V., Granados, Daniel, Osorio, M. R., Borca-Tasciuc, Theodorian, & Martin-Gonzalez, Marisol. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films. United States. doi:10.1063/1.4928863.
Rojo, Miguel Munoz, Manzano, Cristina V., Granados, Daniel, Osorio, M. R., Borca-Tasciuc, Theodorian, and Martin-Gonzalez, Marisol. Fri . "High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films". United States. doi:10.1063/1.4928863.
@article{osti_1210110,
title = {High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films},
author = {Rojo, Miguel Munoz and Manzano, Cristina V. and Granados, Daniel and Osorio, M. R. and Borca-Tasciuc, Theodorian and Martin-Gonzalez, Marisol},
abstractNote = {The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. In conclusion, a high electrical conductivity of (3.2 ± 0.4) · 105S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.},
doi = {10.1063/1.4928863},
journal = {AIP Advances},
issn = {2158-3226},
number = 8,
volume = 5,
place = {United States},
year = {2015},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4928863

Citation Metrics:
Cited by: 2 works
Citation information provided by
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Works referenced in this record:

Thin-film thermoelectric devices with high room-temperature figures of merit
journal, October 2001

  • Venkatasubramanian, Rama; Siivola, Edward; Colpitts, Thomas
  • Nature, Vol. 413, Issue 6856, p. 597-602
  • DOI: 10.1038/35098012