First-principles calculations of indirect Auger recombination in nitride semiconductors
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1206796
- Grant/Contract Number:
- SC0010689; AC02-05CH11231
- Resource Type:
- Journal Article: Publisher's Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 92 Journal Issue: 3; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kioupakis, Emmanouil, Steiauf, Daniel, Rinke, Patrick, Delaney, Kris T., and Van de Walle, Chris G. First-principles calculations of indirect Auger recombination in nitride semiconductors. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.035207.
Kioupakis, Emmanouil, Steiauf, Daniel, Rinke, Patrick, Delaney, Kris T., & Van de Walle, Chris G. First-principles calculations of indirect Auger recombination in nitride semiconductors. United States. https://doi.org/10.1103/PhysRevB.92.035207
Kioupakis, Emmanouil, Steiauf, Daniel, Rinke, Patrick, Delaney, Kris T., and Van de Walle, Chris G. 2015.
"First-principles calculations of indirect Auger recombination in nitride semiconductors". United States. https://doi.org/10.1103/PhysRevB.92.035207.
@article{osti_1206796,
title = {First-principles calculations of indirect Auger recombination in nitride semiconductors},
author = {Kioupakis, Emmanouil and Steiauf, Daniel and Rinke, Patrick and Delaney, Kris T. and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1103/PhysRevB.92.035207},
url = {https://www.osti.gov/biblio/1206796},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 3,
volume = 92,
place = {United States},
year = {Thu Jul 30 00:00:00 EDT 2015},
month = {Thu Jul 30 00:00:00 EDT 2015}
}
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