Silicon Carbide Emitter Turn-Off Thyristor
- Semiconductor Power Electronics Center (SPEC), Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
- Solitronics LLC, Cary, NC 27518, USA
- Sandia National Laboratories, Albuquerque, NM 87185, USA
A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 conduction and the 100 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1198183
- Journal Information:
- International Journal of Power Management Electronics, Journal Name: International Journal of Power Management Electronics Vol. 2008; ISSN 1687-6679
- Publisher:
- Hindawi Publishing CorporationCopyright Statement
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Experimental and numerical study of the emitter turn-off thyristor (ETO)
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journal | May 2000 |
3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
|
journal | March 2001 |
SiC power-switching devices-the second electronics revolution?
|
journal | June 2002 |
Reliability of SiC MOS devices
|
journal | October 2004 |
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