Effects of deposition termination on Cu2ZnSnSe4 device characteristics

Journal Article · Fri May 01 00:00:00 EDT 2015 · Thin Solid Films

DOI:https://doi.org/10.1016/j.tsf.2014.09.028· OSTI ID:1197976

Repins, I. L.; Li, J. V.; Kanevce, A.; Perkins, C. L.; Steirer, K. X.; Pankow, J.; Teeter, G.; Kuciauskas, D.; Beall, C.; Dehart, C.; Carapella, J.; Bob, B.; Park, J. -S.; Wei, S. -H.

We use co-evaporated Cu₂ZnSnSe₄ (CZTSe) to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Moreover, surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1197976
• Alternate ID(s): OSTI ID: 1220597
• Report Number(s): NREL/JA-5K00-61834; S0040609014009067; PII: S0040609014009067
• Journal Information: Thin Solid Films, Journal Name: Thin Solid Films Vol. 582 Journal Issue: C; ISSN 0040-6090
• Publisher: Elsevier
• Country of Publication: Netherlands
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
Copper zinc tin selenide
Copper zinc tin sulfide
Kesterite
Thin films
Surface
Hole barrier
Voltage
Solar cell