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Title: Electrically tunable infrared metamaterial devices

Abstract

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1195934
Patent Number(s):
9,086,510
Application Number:
13/908,826
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jun 03
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Brener, Igal, and Jun, Young Chul. Electrically tunable infrared metamaterial devices. United States: N. p., 2015. Web.
Brener, Igal, & Jun, Young Chul. Electrically tunable infrared metamaterial devices. United States.
Brener, Igal, and Jun, Young Chul. Tue . "Electrically tunable infrared metamaterial devices". United States. doi:. https://www.osti.gov/servlets/purl/1195934.
@article{osti_1195934,
title = {Electrically tunable infrared metamaterial devices},
author = {Brener, Igal and Jun, Young Chul},
abstractNote = {A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 21 00:00:00 EDT 2015},
month = {Tue Jul 21 00:00:00 EDT 2015}
}

Patent:

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Works referenced in this record:

Berreman mode and epsilon near zero mode
journal, January 2012

  • Vassant, Simon; Hugonin, Jean-Paul; Marquier, Francois
  • Optics Express, Vol. 20, Issue 21, p. 23971-23977
  • DOI: 10.1364/OE.20.023971

Epsilon-Near-Zero Mode for Active Optoelectronic Devices
journal, December 2012