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Title: Solar cell contact formation using laser ablation

Patent ·
OSTI ID:1195928

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
9,087,939
Application Number:
14/334,401
OSTI ID:
1195928
Resource Relation:
Patent File Date: 2014 Jul 17
Country of Publication:
United States
Language:
English

References (8)

Photovoltaic device patent April 1998
Back side contact solar cell with doped polysilicon regions patent December 2008
Solar cell contact formation using laser ablation patent December 2012
Solar cell contact formation using laser ablation patent July 2014
Back-Contact Photovoltaic Cells patent-application June 2007
Methods of fabricating solar-cell structures and resulting solar-cell structures patent-application July 2009
Methods for forming mutiple-layer electrode structures for silicon photovoltaic cells patent-application September 2009
Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions patent-application December 2009