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Title: Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.

Abstract

The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
11953
Report Number(s):
ANL/MSD/CP-99947
TRN: AH200119%%221
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: Integrated Ferroelectric as the Proceedings of the International Workshop on Ferroelectric and High Dielectric Thin Films, San Juan (PR), 05/12/1999--05/15/1999; Other Information: PBD: 30 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITORS; DIELECTRIC MATERIALS; ELLIPSOMETRY; EXPLOSIVES; IMPLEMENTATION; MICROSTRUCTURE; PERMITTIVITY; SCATTERING; SPECTROSCOPY; THIN FILMS

Citation Formats

Auciello, O., Dhote, A., Gao, Y., Gruen, D. M., Im, J., Irene, E. A., Krauss, A. R., Mueller, A. H., and Ramesh, R. Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.. United States: N. p., 1999. Web.
Auciello, O., Dhote, A., Gao, Y., Gruen, D. M., Im, J., Irene, E. A., Krauss, A. R., Mueller, A. H., & Ramesh, R. Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.. United States.
Auciello, O., Dhote, A., Gao, Y., Gruen, D. M., Im, J., Irene, E. A., Krauss, A. R., Mueller, A. H., and Ramesh, R. Mon . "Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.". United States. https://www.osti.gov/servlets/purl/11953.
@article{osti_11953,
title = {Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.},
author = {Auciello, O. and Dhote, A. and Gao, Y. and Gruen, D. M. and Im, J. and Irene, E. A. and Krauss, A. R. and Mueller, A. H. and Ramesh, R.},
abstractNote = {The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}

Conference:
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