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Title: Growth textures of thick sputtered films and multilayers assessed via synchrotron transmission Laue

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.360746· OSTI ID:119404
 [1];  [2]; ;  [1]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  2. Stanford Synchrotron Radiation Laboratory, Stanford, California 94305 (United States)

The growth textures of {ital thick} sputtered Mo metallizations and Mo/W multilayers, were characterized via a synchrotron white-beam (WB) x-ray transmission Laue technique. Transmission x-ray diffraction studies of Mo specimens up to 61 {mu}m thick were performed with WB synchrotron radiation; while the practical thickness limit for similar observations using a conventional laboratory Cu {ital K}({alpha}) x-ray source is ten times smaller. This unique approach used polychromatic x rays to simultaneously produce diffraction from a wide spread of orientations of many crystallographic planes for all the grains within a relatively large specimen volume ({approx}60{times}10{sup 6} {mu}m{sup 3}). These patterns were obtained for polycrystalline 31- and 61-{mu}m-thick Mo/W multilayer specimens, and a 35-{mu}m-thick-monolithic Mo foil specimen. In all three cases the alignment of specimen grains was similar to what would be expected for single-crystal transmission patterns, except that the recorded intensity distributed was less localized. The WB transmission images were indexed using a reciprocal space construction for the Laue case. In the multilayers, the grains were oriented {ital out}-{ital of}-{ital plane} such that {l_angle}110{r_angle} crystallographic planes were aligned in the direction of sputter growth, while in the monolithic Mo specimen {l_angle}111{r_angle} crystallographic planes were so aligned, i.e., perpendicular to the deposition substrate. A spread in orientation of {similar_to}5{degree} was measured in the multilayer specimens, while the monolithic Mo specimen showed a spread of {similar_to}30{degree} when compared to a perfect single-crystal orientation. Preferred orientation was also observed {ital within} {ital the} {ital plane} of growth to varying degrees for all three samples.

OSTI ID:
119404
Journal Information:
Journal of Applied Physics, Vol. 78, Issue 6; Other Information: PBD: 15 Sep 1995
Country of Publication:
United States
Language:
English

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