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Title: Surface state reconstruction in ion-damaged SmB 6

Abstract

We have used ion-irradiation to damage the (001) surfaces of SmB₆ single crystals to varying depths, and have measured the resistivity as a function of temperature for each depth of damage. We observe a reduction in the residual resistivity with increasing depth of damage. Our data are consistent with a model in which the surface state is not destroyed by the ion-irradiation, however instead the damaged layer is poorly conducting and the initial surface state is reconstructed below the damage. This behavior is consistent with a surface state that is topologically protected.

Authors:
 [1];  [1];  [2];  [1];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Univ. of California, Irvine, CA (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1193286
Alternate Identifier(s):
OSTI ID: 1180728
Report Number(s):
LA-UR-14-29104
Journal ID: ISSN 1098-0121; PRBMDO
Grant/Contract Number:
AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 91; Journal Issue: 8; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wakeham, N., Wang, Y. Q., Fisk, Z., Ronning, F., and Thompson, J. D.. Surface state reconstruction in ion-damaged SmB6. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.085107.
Wakeham, N., Wang, Y. Q., Fisk, Z., Ronning, F., & Thompson, J. D.. Surface state reconstruction in ion-damaged SmB6. United States. doi:10.1103/PhysRevB.91.085107.
Wakeham, N., Wang, Y. Q., Fisk, Z., Ronning, F., and Thompson, J. D.. Thu . "Surface state reconstruction in ion-damaged SmB6". United States. doi:10.1103/PhysRevB.91.085107. https://www.osti.gov/servlets/purl/1193286.
@article{osti_1193286,
title = {Surface state reconstruction in ion-damaged SmB6},
author = {Wakeham, N. and Wang, Y. Q. and Fisk, Z. and Ronning, F. and Thompson, J. D.},
abstractNote = {We have used ion-irradiation to damage the (001) surfaces of SmB₆ single crystals to varying depths, and have measured the resistivity as a function of temperature for each depth of damage. We observe a reduction in the residual resistivity with increasing depth of damage. Our data are consistent with a model in which the surface state is not destroyed by the ion-irradiation, however instead the damaged layer is poorly conducting and the initial surface state is reconstructed below the damage. This behavior is consistent with a surface state that is topologically protected.},
doi = {10.1103/PhysRevB.91.085107},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 8,
volume = 91,
place = {United States},
year = {Thu Feb 12 00:00:00 EST 2015},
month = {Thu Feb 12 00:00:00 EST 2015}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 18 works
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