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Title: Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates

Abstract

Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N2 ambient atmosphere at 650 °C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibits the presence of <221> oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/m-K² at 800 K. ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/m-K² at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm² V⁻¹ s⁻¹ and the power factor of 3.3 W/m-K² at 800 K.

Authors:
 [1];  [2];  [3];  [1];  [3];  [4];  [1]
  1. Purdue Univ., West Lafayette, IN (United States)
  2. Purdue Univ., West Lafayette, IN (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Univ. of California, Santa Cruz, Santa Cruz, CA (United States)
  4. Purdue Univ., West Lafayette, IN (United States); Univ. of California, Santa Cruz, Santa Cruz, CA (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1193239
Report Number(s):
BNL-108170-2015-JA
Journal ID: ISSN 0884-2914; KC040302
Grant/Contract Number:  
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 30; Journal Issue: 5; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Burmistrova, Polina V., Zakharov, Dmitri N., Favaloro, Tela, Mohammed, Amr, Stach, Eric A., Shakouri, Ali, and Sands, Timothy D. Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates. United States: N. p., 2015. Web. doi:10.1557/jmr.2015.30.
Burmistrova, Polina V., Zakharov, Dmitri N., Favaloro, Tela, Mohammed, Amr, Stach, Eric A., Shakouri, Ali, & Sands, Timothy D. Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates. United States. doi:10.1557/jmr.2015.30.
Burmistrova, Polina V., Zakharov, Dmitri N., Favaloro, Tela, Mohammed, Amr, Stach, Eric A., Shakouri, Ali, and Sands, Timothy D. Sat . "Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates". United States. doi:10.1557/jmr.2015.30. https://www.osti.gov/servlets/purl/1193239.
@article{osti_1193239,
title = {Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates},
author = {Burmistrova, Polina V. and Zakharov, Dmitri N. and Favaloro, Tela and Mohammed, Amr and Stach, Eric A. and Shakouri, Ali and Sands, Timothy D.},
abstractNote = {Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N2 ambient atmosphere at 650 °C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibits the presence of <221> oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/m-K² at 800 K. ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/m-K² at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm² V⁻¹ s⁻¹ and the power factor of 3.3 W/m-K² at 800 K.},
doi = {10.1557/jmr.2015.30},
journal = {Journal of Materials Research},
number = 5,
volume = 30,
place = {United States},
year = {Sat Mar 14 00:00:00 EDT 2015},
month = {Sat Mar 14 00:00:00 EDT 2015}
}

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