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Title: Unexpected Stable Two-dimensional Silicon Phosphides with Different Stoichiometries [Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties]

Abstract

We report that the discovery of stable two-dimensional, earth-abundant, semiconducting materials is of great interest and may impact future electronic technologies. By combining global structural prediction and first-principles calculations, we have theoretically discovered several previously unknown semiconducting silicon phosphides (Si xP y) monolayers, which could be formed stably at the stoichiometries of y/x ≥1. Unexpectedly, some of these compounds, i.e., P-6m2 Si 1P 1 and Pm Si 1P 2, have comparable or even lower formation enthalpies than their previously known bulk allotropes. The band gaps (Eg) of Si xP y compounds can be dramatically tuned in an extremely wide range (0< E g < 3 eV) by simply changing the number of layers or applying an in-plane strain. Furthermore, we find that carrier doping can drive the ground state of C2/m Si 1P 3 from a nonmagnetic state into a robust half-metallic spin-polarized state, originating from its unique valence band structure, which can extend the use of Si-related compounds for spintronics.

Authors:
 [1];  [1];  [1];  [1];  [2]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1185782
Alternate Identifier(s):
OSTI ID: 1180024
Grant/Contract Number:  
AC05-00OR22725; AC36-08GO28308; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 91; Journal Issue: 12; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Huang, Bing, Zhuang, Houlong L., Yoon, Mina, Sumpter, Bobby G., and Wei, Su-Huai. Unexpected Stable Two-dimensional Silicon Phosphides with Different Stoichiometries [Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties]. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.121401.
Huang, Bing, Zhuang, Houlong L., Yoon, Mina, Sumpter, Bobby G., & Wei, Su-Huai. Unexpected Stable Two-dimensional Silicon Phosphides with Different Stoichiometries [Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties]. United States. doi:10.1103/PhysRevB.91.121401.
Huang, Bing, Zhuang, Houlong L., Yoon, Mina, Sumpter, Bobby G., and Wei, Su-Huai. Tue . "Unexpected Stable Two-dimensional Silicon Phosphides with Different Stoichiometries [Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties]". United States. doi:10.1103/PhysRevB.91.121401. https://www.osti.gov/servlets/purl/1185782.
@article{osti_1185782,
title = {Unexpected Stable Two-dimensional Silicon Phosphides with Different Stoichiometries [Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties]},
author = {Huang, Bing and Zhuang, Houlong L. and Yoon, Mina and Sumpter, Bobby G. and Wei, Su-Huai},
abstractNote = {We report that the discovery of stable two-dimensional, earth-abundant, semiconducting materials is of great interest and may impact future electronic technologies. By combining global structural prediction and first-principles calculations, we have theoretically discovered several previously unknown semiconducting silicon phosphides (SixPy) monolayers, which could be formed stably at the stoichiometries of y/x ≥1. Unexpectedly, some of these compounds, i.e., P-6m2 Si1P1 and Pm Si1P2, have comparable or even lower formation enthalpies than their previously known bulk allotropes. The band gaps (Eg) of SixPy compounds can be dramatically tuned in an extremely wide range (0< Eg < 3 eV) by simply changing the number of layers or applying an in-plane strain. Furthermore, we find that carrier doping can drive the ground state of C2/m Si1P3 from a nonmagnetic state into a robust half-metallic spin-polarized state, originating from its unique valence band structure, which can extend the use of Si-related compounds for spintronics.},
doi = {10.1103/PhysRevB.91.121401},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 12,
volume = 91,
place = {United States},
year = {Tue Mar 03 00:00:00 EST 2015},
month = {Tue Mar 03 00:00:00 EST 2015}
}

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Cited by: 9 works
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Works referenced in this record:

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