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Title: The Seebeck Coefficient and Phonon Drag in Silicon

Abstract

We present a theory of the phonon-drag Seebeck coe cient in nondegenerate semiconductors, and apply it to silicon for temperatures 30 < T < 300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We nd excellent agreement with the measurements of Geballe and Hull [Phys.Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.

Authors:
 [1];  [2];  [3]
  1. Pennsylvania State Univ., University Park, PA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Boston College, Chestnut Hill, MA (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1185754
Grant/Contract Number:
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mahan, Gerald, Lindsay, Lucas R., and Broido, David. The Seebeck Coefficient and Phonon Drag in Silicon. United States: N. p., 2014. Web. doi:10.1063/1.4904925.
Mahan, Gerald, Lindsay, Lucas R., & Broido, David. The Seebeck Coefficient and Phonon Drag in Silicon. United States. doi:10.1063/1.4904925.
Mahan, Gerald, Lindsay, Lucas R., and Broido, David. Mon . "The Seebeck Coefficient and Phonon Drag in Silicon". United States. doi:10.1063/1.4904925. https://www.osti.gov/servlets/purl/1185754.
@article{osti_1185754,
title = {The Seebeck Coefficient and Phonon Drag in Silicon},
author = {Mahan, Gerald and Lindsay, Lucas R. and Broido, David},
abstractNote = {We present a theory of the phonon-drag Seebeck coe cient in nondegenerate semiconductors, and apply it to silicon for temperatures 30 < T < 300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We nd excellent agreement with the measurements of Geballe and Hull [Phys.Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.},
doi = {10.1063/1.4904925},
journal = {Journal of Applied Physics},
number = ,
volume = 116,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 8 works
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