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Title: Spectroscopic determination of the bandgap crossover composition in MBE-grown Al xGa 1-xAs

Abstract

The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy Al xGa 1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

Authors:
 [1];  [1];  [2];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1184998
Report Number(s):
SAND-2014-20322J
Journal ID: ISSN 0021-4922; 547684
Grant/Contract Number:
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 54; Journal Issue: 4; Journal ID: ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Fluegel, Brian, Alberi, Kirstin, Reno, John, and Mascarenhas, Angelo. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs. United States: N. p., 2015. Web. doi:10.7567/JJAP.54.042402.
Fluegel, Brian, Alberi, Kirstin, Reno, John, & Mascarenhas, Angelo. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs. United States. doi:10.7567/JJAP.54.042402.
Fluegel, Brian, Alberi, Kirstin, Reno, John, and Mascarenhas, Angelo. Thu . "Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs". United States. doi:10.7567/JJAP.54.042402. https://www.osti.gov/servlets/purl/1184998.
@article{osti_1184998,
title = {Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs},
author = {Fluegel, Brian and Alberi, Kirstin and Reno, John and Mascarenhas, Angelo},
abstractNote = {The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.},
doi = {10.7567/JJAP.54.042402},
journal = {Japanese Journal of Applied Physics},
number = 4,
volume = 54,
place = {United States},
year = {Thu Mar 12 00:00:00 EDT 2015},
month = {Thu Mar 12 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 2 works
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