Fractional quantum Hall effect at Landau level filling ν = 4/11
Abstract
In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance R _{xx} and a quantized Hall resistance R _{xy}, within 1% of the expected value of h/(4/11)e ^{2}, were observed. The temperature dependence of the R _{xx} minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.
 Authors:
 Sandia National Lab. (SNLNM), Albuquerque, NM (United States)
 Princeton Univ., Princeton, NJ (United States)
 Publication Date:
 Research Org.:
 Sandia National Lab. (SNLNM), Albuquerque, NM (United States)
 Sponsoring Org.:
 USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC22)
 OSTI Identifier:
 1184984
 Alternate Identifier(s):
 OSTI ID: 1181427
 Report Number(s):
 SAND201420014J
Journal ID: ISSN 10980121; PRBMDO; 547344; TRN: US1600810
 Grant/Contract Number:
 AC0494AL85000; AC04–94AL85000
 Resource Type:
 Journal Article: Accepted Manuscript
 Journal Name:
 Physical Review. B, Condensed Matter and Materials Physics
 Additional Journal Information:
 Journal Volume: 91; Journal Issue: 4; Journal ID: ISSN 10980121
 Publisher:
 American Physical Society (APS)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., and Tsui, D. C. Fractional quantum Hall effect at Landau level filling ν = 4/11. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.041301.
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., & Tsui, D. C. Fractional quantum Hall effect at Landau level filling ν = 4/11. United States. doi:10.1103/PhysRevB.91.041301.
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., and Tsui, D. C. 2015.
"Fractional quantum Hall effect at Landau level filling ν = 4/11". United States.
doi:10.1103/PhysRevB.91.041301. https://www.osti.gov/servlets/purl/1184984.
@article{osti_1184984,
title = {Fractional quantum Hall effect at Landau level filling ν = 4/11},
author = {Pan, W. and Baldwin, K. W. and West, K. W. and Pfeiffer, L. N. and Tsui, D. C.},
abstractNote = {In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.},
doi = {10.1103/PhysRevB.91.041301},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 4,
volume = 91,
place = {United States},
year = 2015,
month = 1
}
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