Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

Journal Article · Sun Mar 01 00:00:00 EST 2015 · Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 33(2):021516

DOI:https://doi.org/10.1116/1.4906143· OSTI ID:1184965

Wang, Yuhan; Comes, Ryan B.; Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1184965
• Report Number(s): PNNL-SA-106223; 48341; 47862
• Journal Information: Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 33(2):021516, Journal Name: Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 33(2):021516
• Country of Publication: United States
• Language: English

Related Subjects

Environmental Molecular Sciences Laboratory