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Title: Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

Abstract

Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1184965
Report Number(s):
PNNL-SA-106223
48341; 47862
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 33(2):021516
Country of Publication:
United States
Language:
English
Subject:
Environmental Molecular Sciences Laboratory

Citation Formats

Wang, Yuhan, Comes, Ryan B., Kittiwatanakul, Salinporn, Wolf, Stuart A., and Lu, Jiwei. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition. United States: N. p., 2015. Web. doi:10.1116/1.4906143.
Wang, Yuhan, Comes, Ryan B., Kittiwatanakul, Salinporn, Wolf, Stuart A., & Lu, Jiwei. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition. United States. doi:10.1116/1.4906143.
Wang, Yuhan, Comes, Ryan B., Kittiwatanakul, Salinporn, Wolf, Stuart A., and Lu, Jiwei. Sun . "Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition". United States. doi:10.1116/1.4906143.
@article{osti_1184965,
title = {Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition},
author = {Wang, Yuhan and Comes, Ryan B. and Kittiwatanakul, Salinporn and Wolf, Stuart A. and Lu, Jiwei},
abstractNote = {Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.},
doi = {10.1116/1.4906143},
journal = {Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 33(2):021516},
number = ,
volume = ,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 2015},
month = {Sun Mar 01 00:00:00 EST 2015}
}