skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Recent Progress in Silicon-based Spintronic Materials

Authors:
; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1184732
Report Number(s):
LLNL-BOOK-659524
DOE Contract Number:
DE-AC52-07NA27344
Resource Type:
Book
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Damewood, L, Fong, C Y, and Yang, L H. Recent Progress in Silicon-based Spintronic Materials. United States: N. p., 2014. Web.
Damewood, L, Fong, C Y, & Yang, L H. Recent Progress in Silicon-based Spintronic Materials. United States.
Damewood, L, Fong, C Y, and Yang, L H. Thu . "Recent Progress in Silicon-based Spintronic Materials". United States. doi:. https://www.osti.gov/servlets/purl/1184732.
@article{osti_1184732,
title = {Recent Progress in Silicon-based Spintronic Materials},
author = {Damewood, L and Fong, C Y and Yang, L H},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Aug 28 00:00:00 EDT 2014},
month = {Thu Aug 28 00:00:00 EDT 2014}
}

Book:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this book.

Save / Share:
  • The authors review the recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.
  • Most types of GaN based Field Effect Transistors--MESFETS, MISFETS, heterostructure FETs (HFETs), and Doped Channel HFETs (DC-HFETs) have demonstrated a good performance at both room temperature and elevated temperatures. The DC-HFETs demonstrated the best direct current and microwave characteristics among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel. Other advantages of GaN-based materials for FET applications include a very high breakdown field, a very high saturation field, a high peak velocity, a large conduction and valence band discontinuitiesmore » at the AlN-GaN heterointerface, and a reasonable thermal conductivity (comparable to that of Si). In this paper, the authors review their recent results obtained for different types of GaN-based transistors.« less
  • A promising approach to increasing fracture toughness and decreasing the DBTT of a W-alloy is by ductile-phase toughening (DPT) [1-3]. In this method, a ductile phase is included in a brittle matrix to prevent fracture propagation by crack bridging. To examine the prospect of DPT, W-Cu three-point bend samples were deformed at several strain rates and temperatures. Data from these tests is used for the calibration of a dynamic crack-bridging model that can effectively predict elevated temperature crack growth in W-composites. The development and initial testing of a Cu-ligament bridging model based on a micromechanical flow stress model of Cumore » is discussed. Good agreement with the 3-point bend testing data is demonstrated along with future plans to improve the model.« less
  • The objective of this study is to develop the materials science of fiber-reinforced tungsten composites as candidates for plasma-facing components in future fusion reactors.
  • A promising approach to increasing the fracture toughness of W-alloys is ductile-phase toughening (DPT). A ductile phase reinforcement in a brittle matrix increases toughness primarily by crack bridging. A W-Cu laminate was fabricated and the properties of the constituent metals were characterized along with those for the composite. Development of a design model for large-scale crack bridging continued.