skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Processing of insulators and semiconductors

Abstract

A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1184555
Patent Number(s):
9,059,079
Application Number:
14/036,925
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, and Angelini, Joseph Attilio. Processing of insulators and semiconductors. United States: N. p., 2015. Web.
Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, & Angelini, Joseph Attilio. Processing of insulators and semiconductors. United States.
Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, and Angelini, Joseph Attilio. Tue . "Processing of insulators and semiconductors". United States. https://www.osti.gov/servlets/purl/1184555.
@article{osti_1184555,
title = {Processing of insulators and semiconductors},
author = {Quick, Nathaniel R. and Joshi, Pooran C. and Duty, Chad Edward and Jellison, Jr., Gerald Earle and Angelini, Joseph Attilio},
abstractNote = {A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}

Patent:

Save / Share:

Works referenced in this record:

Laser Direct Write of Conducting and Insulating Tracks in Silicon Carbide
journal, January 2000


Laser conversion of electrical properties for silicon carbide device applications
journal, February 2001

  • Sengupta, D. K.; Quick, N. R.; Kar, A.
  • Journal of Laser Applications, Vol. 13, Issue 1
  • DOI: 10.2351/1.1340336

Laser doping of silicon carbide substrates
journal, March 2002


Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials
journal, August 2005


Laser synthesis of carbon-rich SiC nanoribbons
journal, June 2003

  • Salama, I. A.; Quick, N. R.; Kar, A.
  • Journal of Applied Physics, Vol. 93, Issue 11
  • DOI: 10.1063/1.1570928

Laser direct writing and doping of diamond-like carbon, polycrystalline diamond, and single crystal silicon carbide
journal, May 2004

  • Salama, I. A.; Quick, N. R.; Kar, A.
  • Journal of Laser Applications, Vol. 16, Issue 2
  • DOI: 10.2351/1.1710884

Laser Direct Write and Gas Immersion Laser Doping Fabrication of SiC Diodes
journal, January 2004


Effects of different laser sources and doping methods used to dope silicon carbide
journal, May 2005


Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping
journal, April 2005


CO2 Laser Drilling of Microvias Using Diffractive Optics Techniques: I — Mathematical Modeling
conference, March 2009

  • Zhang, Chong; Bet, Sachin; Salama, Islam A.
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference, Advances in Electronic Packaging, Parts A, B, and C
  • DOI: 10.1115/IPACK2005-73474

Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
journal, September 2006


Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes
journal, October 2006


SiC-based optical interferometry at high pressures and temperatures for pressure and chemical sensing
journal, May 2006

  • Dakshinamurthy, Surendramohan; Quick, Nathaniel R.; Kar, Aravinda
  • Journal of Applied Physics, Vol. 99, Issue 9
  • DOI: 10.1063/1.2191478

Modelling of microvia drilling with a Nd : YAG laser
journal, August 2006


Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide
journal, January 2006


Laser Doping of Chromium and Selenium in p-Type 4H-SiC
journal, September 2008


Effect of laser field and thermal stress on diffusion in laser doping of SiC
journal, December 2007


Laser-doping of silicon carbide for p-n junction and LED fabrication
journal, April 2007

  • Bet, Sachin; Quick, Nathaniel; Kar, Aravinda
  • physica status solidi (a), Vol. 204, Issue 4
  • DOI: 10.1002/pssa.200622466

Temperature-dependent optical properties of silicon carbide for wireless temperature sensors
journal, January 2007

  • Dakshinamurthy, S.; Quick, N. R.; Kar, A.
  • Journal of Physics D: Applied Physics, Vol. 40, Issue 2
  • DOI: 10.1088/0022-3727/40/2/010

Determination of Thermophysical Properties for Polymer Films using Conduction Analysis of Laser Heating
journal, June 2007

  • Zhang, Chong; Salama, Islam A.; Quick, Nathaniel R.
  • International Journal of Thermophysics, Vol. 28, Issue 3
  • DOI: 10.1007/s10765-007-0199-6

Laser doping of chromium in 6H-SiC for white light emitting diodes
journal, February 2008

  • Bet, Sachin; Quick, Nathaniel; Kar, Aravinda
  • Journal of Laser Applications, Vol. 20, Issue 1
  • DOI: 10.2351/1.2832406

Laser endotaxy in silicon carbide and PIN diode fabrication
journal, May 2008

  • Tian, Z.; Quick, N. R.; Kar, A.
  • Journal of Laser Applications, Vol. 20, Issue 2
  • DOI: 10.2351/1.2831607

Laser direct write doping of wide-bandgap semiconductor materials
conference, January 2004

  • Salama, I. A.; Quick, N. R.; Kar, A.
  • 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
  • DOI: 10.1109/ISCSPC.2003.1354423

Laser microprocessing of wide bandgap materials
conference, March 2003

  • Salama, Islam A.; Quick, N. R.; Kar, Aravinda
  • LAMP 2002: International Congress on Laser Advanced Materials Processing, SPIE Proceedings
  • DOI: 10.1117/12.486496

Laser direct write doping of wide-bandgap semiconductor materials
conference, January 2004

  • Salama, I. A.; Quick, N. R.; Kar, A.
  • 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
  • DOI: 10.1109/ISCSPC.2003.1354423

Laser Doping of Chromium and Selenium in p-Type 4H-SiC
journal, September 2008


Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
journal, May 2006

  • Kamiyama, S.; Maeda, T.; Nakamura, Y.
  • Journal of Applied Physics, Vol. 99, Issue 9
  • DOI: 10.1063/1.2195883

Effects of different laser sources and doping methods used to dope silicon carbide
journal, May 2005


Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
journal, September 2006