Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Processing of insulators and semiconductors

Patent ·
OSTI ID:1184555
A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Number(s):
9,059,079
Application Number:
14/036,925
OSTI ID:
1184555
Country of Publication:
United States
Language:
English

References (25)

Laser Direct Write of Conducting and Insulating Tracks in Silicon Carbide journal January 2000
Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide journal January 2006
Laser direct writing and doping of diamond-like carbon, polycrystalline diamond, and single crystal silicon carbide journal May 2004
Laser doping of silicon carbide substrates journal March 2002
Laser endotaxy in silicon carbide and PIN diode fabrication journal May 2008
Laser doping of chromium in 6H-SiC for white light emitting diodes journal February 2008
Laser synthesis of carbon-rich SiC nanoribbons journal June 2003
Laser conversion of electrical properties for silicon carbide device applications journal February 2001
CO2 Laser Drilling of Microvias Using Diffractive Optics Techniques: I — Mathematical Modeling
  • Zhang, Chong; Bet, Sachin; Salama, Islam A.
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference, Advances in Electronic Packaging, Parts A, B, and C https://doi.org/10.1115/IPACK2005-73474
conference March 2009
Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide journal September 2006
Laser Doping of Chromium and Selenium in p-Type 4H-SiC journal September 2008
Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials journal August 2005
Laser microprocessing of wide bandgap materials
  • Salama, Islam A.; Quick, N. R.; Kar, Aravinda
  • LAMP 2002: International Congress on Laser Advanced Materials Processing, SPIE Proceedings https://doi.org/10.1117/12.486496
conference March 2003
Temperature-dependent optical properties of silicon carbide for wireless temperature sensors journal January 2007
Effects of different laser sources and doping methods used to dope silicon carbide journal May 2005
Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping journal April 2005
Modelling of microvia drilling with a Nd : YAG laser journal August 2006
Laser-doping of silicon carbide for p-n junction and LED fabrication journal April 2007
Laser direct write doping of wide-bandgap semiconductor materials conference January 2004
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC journal May 2006
Determination of Thermophysical Properties for Polymer Films using Conduction Analysis of Laser Heating journal June 2007
Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes journal October 2006
SiC-based optical interferometry at high pressures and temperatures for pressure and chemical sensing journal May 2006
Effect of laser field and thermal stress on diffusion in laser doping of SiC journal December 2007
Laser Direct Write and Gas Immersion Laser Doping Fabrication of SiC Diodes journal January 2004