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Title: Transistor-based particle detection systems and methods

Abstract

Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

Inventors:
; ;
Publication Date:
Research Org.:
Purdue Research Foundation, West Lafayette, IN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1183932
Patent Number(s):
9,052,281
Application Number:
13/748,171
Assignee:
Purdue Research Foundation (West Lafayette, IN) NNSASC
DOE Contract Number:  
FC52-08NA28617
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 54 ENVIRONMENTAL SCIENCES

Citation Formats

Jain, Ankit, Nair, Pradeep R., and Alam, Muhammad Ashraful. Transistor-based particle detection systems and methods. United States: N. p., 2015. Web.
Jain, Ankit, Nair, Pradeep R., & Alam, Muhammad Ashraful. Transistor-based particle detection systems and methods. United States.
Jain, Ankit, Nair, Pradeep R., and Alam, Muhammad Ashraful. Tue . "Transistor-based particle detection systems and methods". United States. doi:. https://www.osti.gov/servlets/purl/1183932.
@article{osti_1183932,
title = {Transistor-based particle detection systems and methods},
author = {Jain, Ankit and Nair, Pradeep R. and Alam, Muhammad Ashraful},
abstractNote = {Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 09 00:00:00 EDT 2015},
month = {Tue Jun 09 00:00:00 EDT 2015}
}

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Works referenced in this record:

Flexure-FET biosensor to break the fundamental sensitivity limits of nanobiosensors using nonlinear electromechanical coupling
journal, May 2012

  • Jain, A.; Nair, P. R.; Alam, M. A.
  • Proceedings of the National Academy of Sciences, Vol. 109, Issue 24, p. 9304-9308
  • DOI: 10.1073/pnas.1203749109

Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years
journal, January 2003