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Title: Electro-refractive photonic device

Abstract

The various technologies presented herein relate to phase shifting light to facilitate any of light switching, modulation, amplification, etc. Structures are presented where a second layer is juxtaposed between a first layer and a third layer with respective doping facilitating formation of p-n junctions at the interface between the first layer and the second layer, and between the second layer and the third layer. Application of a bias causes a carrier concentration change to occur at the p-n junctions which causes a shift in the effective refractive index per incremental change in an applied bias voltage. The effective refractive index enhancement can occur in both reverse bias and forward bias. The structure can be incorporated into a waveguide, an optical resonator, a vertical junction device, a horizontal junction device, a Mach-Zehnder interferometer, a tuneable optical filter, etc.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1183927
Patent Number(s):
9,052,535
Application Number:
14/055,709
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Zortman, William A., and Watts, Michael R. Electro-refractive photonic device. United States: N. p., 2015. Web.
Zortman, William A., & Watts, Michael R. Electro-refractive photonic device. United States.
Zortman, William A., and Watts, Michael R. Tue . "Electro-refractive photonic device". United States. doi:. https://www.osti.gov/servlets/purl/1183927.
@article{osti_1183927,
title = {Electro-refractive photonic device},
author = {Zortman, William A. and Watts, Michael R.},
abstractNote = {The various technologies presented herein relate to phase shifting light to facilitate any of light switching, modulation, amplification, etc. Structures are presented where a second layer is juxtaposed between a first layer and a third layer with respective doping facilitating formation of p-n junctions at the interface between the first layer and the second layer, and between the second layer and the third layer. Application of a bias causes a carrier concentration change to occur at the p-n junctions which causes a shift in the effective refractive index per incremental change in an applied bias voltage. The effective refractive index enhancement can occur in both reverse bias and forward bias. The structure can be incorporated into a waveguide, an optical resonator, a vertical junction device, a horizontal junction device, a Mach-Zehnder interferometer, a tuneable optical filter, etc.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 09 00:00:00 EDT 2015},
month = {Tue Jun 09 00:00:00 EDT 2015}
}

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Works referenced in this record:

Vertical junction silicon microdisk modulators and switches
journal, January 2011

  • Watts, Michael; Zortman, William; Trotter, Douglas
  • Optics Express, Vol. 19, Issue 22, p. 21989-22003
  • DOI: 10.1364/OE.19.021989