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Title: Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

Abstract

Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1183901
Patent Number(s):
9,054,264
Application Number:
13/779,363
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) GFO
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Albin, David S., and Noufi, Rommel. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium. United States: N. p., 2015. Web.
Albin, David S., & Noufi, Rommel. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium. United States.
Albin, David S., and Noufi, Rommel. Tue . "Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium". United States. https://www.osti.gov/servlets/purl/1183901.
@article{osti_1183901,
title = {Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium},
author = {Albin, David S. and Noufi, Rommel},
abstractNote = {Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 09 00:00:00 EDT 2015},
month = {Tue Jun 09 00:00:00 EDT 2015}
}

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Works referenced in this record:

The formation of large-grain CulnSe2 films by selenization by high-rate Se transport under moderate vacuum conditions
journal, April 1995

  • Albin, D. S.; Tuttle, J. R.; Noufi, R.
  • Journal of Electronic Materials, Vol. 24, Issue 4, p. 351-357
  • DOI: 10.1007/BF02659698

Development of thin-film Cu(In,Ga)Se2 and CdTe solar cells
journal, March 2004

  • Romeo, A.; Terheggen, M.; Abou-Ras, D.
  • Progress in Photovoltaics: Research and Applications, Vol. 12, Issue 23, p. 93-111
  • DOI: 10.1002/pip.527