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Title: Density Functional Theory Calculations of Activation Energies for Non-radiative Carrier Capture by Deep Defect Levels in Semiconductors.

Abstract

Abstract not provided.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1183157
Report Number(s):
SAND2014-17861J
537624
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B
Country of Publication:
United States
Language:
English

Citation Formats

Modine, Normand Arthur, Wright, Alan F., and Lee, Stephen R. Density Functional Theory Calculations of Activation Energies for Non-radiative Carrier Capture by Deep Defect Levels in Semiconductors.. United States: N. p., 2014. Web.
Modine, Normand Arthur, Wright, Alan F., & Lee, Stephen R. Density Functional Theory Calculations of Activation Energies for Non-radiative Carrier Capture by Deep Defect Levels in Semiconductors.. United States.
Modine, Normand Arthur, Wright, Alan F., and Lee, Stephen R. Mon . "Density Functional Theory Calculations of Activation Energies for Non-radiative Carrier Capture by Deep Defect Levels in Semiconductors.". United States. doi:.
@article{osti_1183157,
title = {Density Functional Theory Calculations of Activation Energies for Non-radiative Carrier Capture by Deep Defect Levels in Semiconductors.},
author = {Modine, Normand Arthur and Wright, Alan F. and Lee, Stephen R.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {Physical Review B},
number = ,
volume = ,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 2014},
month = {Mon Sep 01 00:00:00 EDT 2014}
}