skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Voltage controlled spintronics device for logic applications.

Abstract

We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistor-like concepts and re-programmable logic gates based on VCR elements.

Authors:
;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
11827
Report Number(s):
ANL/MSD/CP-99109
TRN: AH200118%%224
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: 44th Annual Conference on Magnetism and Magnetic Materials, San Jose, CA (US), 11/15/1999--11/18/1999; Other Information: PBD: 3 Sep 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; MAGNETIC MATERIALS; MAGNETIZATION; ORIENTATION; ROTATION; SPACERS; ELECTRIC POTENTIAL; LOGIC CIRCUITS; GATING CIRCUITS

Citation Formats

Bader, S. D., and You, C.-Y. Voltage controlled spintronics device for logic applications.. United States: N. p., 1999. Web.
Bader, S. D., & You, C.-Y. Voltage controlled spintronics device for logic applications.. United States.
Bader, S. D., and You, C.-Y. Fri . "Voltage controlled spintronics device for logic applications.". United States. https://www.osti.gov/servlets/purl/11827.
@article{osti_11827,
title = {Voltage controlled spintronics device for logic applications.},
author = {Bader, S. D. and You, C.-Y.},
abstractNote = {We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistor-like concepts and re-programmable logic gates based on VCR elements.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: