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Title: Defect reaction network in Si-doped InAs. Numerical predictions.

Abstract

This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

Authors:
 [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1182682
Report Number(s):
SAND2015-3850
583974
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English

Citation Formats

Schultz, Peter A. Defect reaction network in Si-doped InAs. Numerical predictions.. United States: N. p., 2015. Web. doi:10.2172/1182682.
Schultz, Peter A. Defect reaction network in Si-doped InAs. Numerical predictions.. United States. doi:10.2172/1182682.
Schultz, Peter A. Fri . "Defect reaction network in Si-doped InAs. Numerical predictions.". United States. doi:10.2172/1182682. https://www.osti.gov/servlets/purl/1182682.
@article{osti_1182682,
title = {Defect reaction network in Si-doped InAs. Numerical predictions.},
author = {Schultz, Peter A.},
abstractNote = {This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank},
doi = {10.2172/1182682},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Technical Report:

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