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Title: Semiconductor devices having a recessed electrode structure

Abstract

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Inventors:
; ;
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1182571
Patent Number(s):
9,041,003
Application Number:
13/649,658
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
AR0000123
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION

Citation Formats

Palacios, Tomas Apostol, Lu, Bin, and Matioli, Elison de Nazareth. Semiconductor devices having a recessed electrode structure. United States: N. p., 2015. Web.
Palacios, Tomas Apostol, Lu, Bin, & Matioli, Elison de Nazareth. Semiconductor devices having a recessed electrode structure. United States.
Palacios, Tomas Apostol, Lu, Bin, and Matioli, Elison de Nazareth. 2015. "Semiconductor devices having a recessed electrode structure". United States. https://www.osti.gov/servlets/purl/1182571.
@article{osti_1182571,
title = {Semiconductor devices having a recessed electrode structure},
author = {Palacios, Tomas Apostol and Lu, Bin and Matioli, Elison de Nazareth},
abstractNote = {An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.},
doi = {},
url = {https://www.osti.gov/biblio/1182571}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Works referenced in this record:

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
journal, January 2005


Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
journal, February 2006


Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment
conference, June 2009


High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
journal, July 2005


730V, 34mΩ-cm2 lateral epilayer RESURF GaN MOSFET
conference, June 2009


Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
journal, January 2007


High performance fully-depleted tri-gate CMOS transistors
journal, April 2003


Tri-Gate Normally-Off GaN Power MISFET
journal, March 2012