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Title: Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared

Abstract

CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.

Authors:
 [1];  [2];  [1];  [3];  [1];  [1];  [2];  [4];  [3];  [5];  [1]
  1. Columbia Univ., New York, NY (United States). Microelectronics Sciences Lab.
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
  3. Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
  4. State Univ. of New York, Albany, NY (United States). College of Nanoscale Science and Engineering
  5. IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1182485
Report Number(s):
BNL-107329-2015-JA
Journal ID: ISSN 1094-4087; R&D Project: 16062; KC0403020
Grant/Contract Number:  
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 22; Journal Issue: 22; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; functional nanomaterials

Citation Formats

Souhan, Brian, Lu, Ming, Grote, Richard R., Chen, Christine P., Huang, Hsu-Cheng, Driscoll, Jeffrey B., Stein, Aaron, Bakhru, Hassaram, Bergman, Keren, Green, William M. J., and Osgood, Jr., Richard M. Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared. United States: N. p., 2014. Web. doi:10.1364/OE.22.027415.
Souhan, Brian, Lu, Ming, Grote, Richard R., Chen, Christine P., Huang, Hsu-Cheng, Driscoll, Jeffrey B., Stein, Aaron, Bakhru, Hassaram, Bergman, Keren, Green, William M. J., & Osgood, Jr., Richard M. Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared. United States. doi:10.1364/OE.22.027415.
Souhan, Brian, Lu, Ming, Grote, Richard R., Chen, Christine P., Huang, Hsu-Cheng, Driscoll, Jeffrey B., Stein, Aaron, Bakhru, Hassaram, Bergman, Keren, Green, William M. J., and Osgood, Jr., Richard M. Tue . "Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared". United States. doi:10.1364/OE.22.027415. https://www.osti.gov/servlets/purl/1182485.
@article{osti_1182485,
title = {Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared},
author = {Souhan, Brian and Lu, Ming and Grote, Richard R. and Chen, Christine P. and Huang, Hsu-Cheng and Driscoll, Jeffrey B. and Stein, Aaron and Bakhru, Hassaram and Bergman, Keren and Green, William M. J. and Osgood, Jr., Richard M.},
abstractNote = {CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.},
doi = {10.1364/OE.22.027415},
journal = {Optics Express},
issn = {1094-4087},
number = 22,
volume = 22,
place = {United States},
year = {2014},
month = {10}
}

Journal Article:
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Cited by: 7 works
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Works referenced in this record:

Thermal stabilization of a microring modulator using feedback control
journal, January 2012

  • Padmaraju, Kishore; Chan, Johnnie; Chen, Long
  • Optics Express, Vol. 20, Issue 27, p. 27999-28008
  • DOI: 10.1364/OE.20.027999