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Title: Robust Helical Edge Transport in Gated InAs / GaSb Bilayers

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1181150
Grant/Contract Number:
FG02-06ER46274
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 9; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Du, Lingjie, Knez, Ivan, Sullivan, Gerard, and Du, Rui-Rui. Robust Helical Edge Transport in Gated InAs / GaSb Bilayers. United States: N. p., 2015. Web. doi:10.1103/PhysRevLett.114.096802.
Du, Lingjie, Knez, Ivan, Sullivan, Gerard, & Du, Rui-Rui. Robust Helical Edge Transport in Gated InAs / GaSb Bilayers. United States. doi:10.1103/PhysRevLett.114.096802.
Du, Lingjie, Knez, Ivan, Sullivan, Gerard, and Du, Rui-Rui. Wed . "Robust Helical Edge Transport in Gated InAs / GaSb Bilayers". United States. doi:10.1103/PhysRevLett.114.096802.
@article{osti_1181150,
title = {Robust Helical Edge Transport in Gated InAs / GaSb Bilayers},
author = {Du, Lingjie and Knez, Ivan and Sullivan, Gerard and Du, Rui-Rui},
abstractNote = {},
doi = {10.1103/PhysRevLett.114.096802},
journal = {Physical Review Letters},
number = 9,
volume = 114,
place = {United States},
year = {Wed Mar 04 00:00:00 EST 2015},
month = {Wed Mar 04 00:00:00 EST 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.114.096802

Citation Metrics:
Cited by: 127 works
Citation information provided by
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