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Title: Antiferromagnetic phase of the gapless semiconductor V 3 Al

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1180134
Grant/Contract Number:  
AC02-98CH10886
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 9; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Jamer, M. E., Assaf, B. A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., and Heiman, D.. Antiferromagnetic phase of the gapless semiconductor V 3 Al. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.094409.
Jamer, M. E., Assaf, B. A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., & Heiman, D.. Antiferromagnetic phase of the gapless semiconductor V 3 Al. United States. doi:10.1103/PhysRevB.91.094409.
Jamer, M. E., Assaf, B. A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., and Heiman, D.. Wed . "Antiferromagnetic phase of the gapless semiconductor V 3 Al". United States. doi:10.1103/PhysRevB.91.094409.
@article{osti_1180134,
title = {Antiferromagnetic phase of the gapless semiconductor V 3 Al},
author = {Jamer, M. E. and Assaf, B. A. and Sterbinsky, G. E. and Arena, D. and Lewis, L. H. and Saúl, A. A. and Radtke, G. and Heiman, D.},
abstractNote = {},
doi = {10.1103/PhysRevB.91.094409},
journal = {Physical Review B},
number = 9,
volume = 91,
place = {United States},
year = {Wed Mar 11 00:00:00 EDT 2015},
month = {Wed Mar 11 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.91.094409

Citation Metrics:
Cited by: 15 works
Citation information provided by
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