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Title: Thin films of a three-dimensional topological insulator in a strong magnetic field: Microscopic study

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1180081
Grant/Contract Number:
FG03-02ER45958
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 7; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Pertsova, A., Canali, C. M., and MacDonald, A. H. Thin films of a three-dimensional topological insulator in a strong magnetic field: Microscopic study. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.075430.
Pertsova, A., Canali, C. M., & MacDonald, A. H. Thin films of a three-dimensional topological insulator in a strong magnetic field: Microscopic study. United States. doi:10.1103/PhysRevB.91.075430.
Pertsova, A., Canali, C. M., and MacDonald, A. H. Thu . "Thin films of a three-dimensional topological insulator in a strong magnetic field: Microscopic study". United States. doi:10.1103/PhysRevB.91.075430.
@article{osti_1180081,
title = {Thin films of a three-dimensional topological insulator in a strong magnetic field: Microscopic study},
author = {Pertsova, A. and Canali, C. M. and MacDonald, A. H.},
abstractNote = {},
doi = {10.1103/PhysRevB.91.075430},
journal = {Physical Review B},
number = 7,
volume = 91,
place = {United States},
year = {Thu Feb 26 00:00:00 EST 2015},
month = {Thu Feb 26 00:00:00 EST 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.91.075430

Citation Metrics:
Cited by: 4works
Citation information provided by
Web of Science

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  • Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs basedmore » on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.« less
  • We describe a theoretical study of the terahertz (THz) radiation field-induced dc transport response of the surface state of a 3D topological insulator that has been subjected to a perpendicular magnetic field. Using the Landau–Floquet state and linear response theory, we obtain the photoconductivity characteristics for various types of polarized THz field. The longitudinal photoconductivity shows a clear oscillatory dependence on ω/ω{sub B}, where ω{sub B}=v{sub F}√(2eB/ℏ). This oscillation occurs because of the oscillatory structure of the Landau density of states and occurs in agreement with the photon-assisted transitions between the different Landau levels. The THz field's polarization has amore » major influence on the photoconductivity. A linear transverse polarization will lead to the most obvious oscillation, while the circular polarization is next to it, but the longitudinal polarization has no influence. We also discuss the broadening effect on the impurity potential and its influence. The findings with regard to the interactions between topological insulators and THz fields actually open a path toward the development of THz device applications of topological insulators.« less
  • Measurements of the orientational and field dependence of normal-metal--insulator--superconductor tunnel junctions have been carried out on superposed Al-Al/sub 2/O/sub 3/-Pb thin films. The experimental results are the subject of a theoretical discussion based on a variational solution of the Ginzburg-Landau free-energy expression for a superconducting film in the presence of an applied magnetic field of arbitrary intensity, whose orientation with respect to the surface of the film makes an angle theta. We derive a general expression for the tunnel characteristics which, near the transition, is in agreement with Tinkham's formula for the upper critical field H/sub c/(theta).