skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.

Abstract

Significant effort is presently focused on reducing the size and weight of power electronic modules. To achieve these goals in high-power capacitors, alternative materials and fabrication processes are needed. Thin film (<0.5 {micro}m) and bulk capacitors that use perovskite-based ferroelectric dielectrics are promising alternative technologies. Ferroelectrics possess high dielectric constants, thus offering substantial increases in volumetric capacitance. In thin film form, these materials display low loss and high breakdown strength. The unique properties of some of these materials, such as a nonlinear dielectric response or a high energy-storage capacity accompanying a phase change, can be exploited for power electronic capacitors. Prototype capacitors of two such materials, (Ba,Sr)TiO{sub 3} and PbZrO{sub 3}, have been fabricated in both thin film and bulk ceramic form. The influence of fabrication conditions on dielectric properties has been studied. Initial studies have demonstrated the viability of perovskite ferroelectrics for next-generation capacitor components.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
11797
Report Number(s):
ANL/ET/CP-98991
TRN: AH200118%%287
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: Power Systems World (PSW)/Power Conversion and Intelligent Motion (PCIM)n '99, Chicago, IL (US), 11/06/1999--11/12/1999; Other Information: PBD: 10 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION; 36 MATERIALS SCIENCE; CAPACITORS; CERAMICS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ENERGY STORAGE; PEROVSKITE; POWER SYSTEMS; THIN FILMS

Citation Formats

Auciello, O. H., Baldo, P., Baumann, P., Erck, R. A., Giumarra, J., Im, J., Kaufman, D. Y., Lanagan, M. T., Pan, M. J., Streiffer, S. K., and Zebrowski, J. High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.. United States: N. p., 1999. Web.
Auciello, O. H., Baldo, P., Baumann, P., Erck, R. A., Giumarra, J., Im, J., Kaufman, D. Y., Lanagan, M. T., Pan, M. J., Streiffer, S. K., & Zebrowski, J. High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.. United States.
Auciello, O. H., Baldo, P., Baumann, P., Erck, R. A., Giumarra, J., Im, J., Kaufman, D. Y., Lanagan, M. T., Pan, M. J., Streiffer, S. K., and Zebrowski, J. Tue . "High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.". United States. https://www.osti.gov/servlets/purl/11797.
@article{osti_11797,
title = {High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.},
author = {Auciello, O. H. and Baldo, P. and Baumann, P. and Erck, R. A. and Giumarra, J. and Im, J. and Kaufman, D. Y. and Lanagan, M. T. and Pan, M. J. and Streiffer, S. K. and Zebrowski, J.},
abstractNote = {Significant effort is presently focused on reducing the size and weight of power electronic modules. To achieve these goals in high-power capacitors, alternative materials and fabrication processes are needed. Thin film (<0.5 {micro}m) and bulk capacitors that use perovskite-based ferroelectric dielectrics are promising alternative technologies. Ferroelectrics possess high dielectric constants, thus offering substantial increases in volumetric capacitance. In thin film form, these materials display low loss and high breakdown strength. The unique properties of some of these materials, such as a nonlinear dielectric response or a high energy-storage capacity accompanying a phase change, can be exploited for power electronic capacitors. Prototype capacitors of two such materials, (Ba,Sr)TiO{sub 3} and PbZrO{sub 3}, have been fabricated in both thin film and bulk ceramic form. The influence of fabrication conditions on dielectric properties has been studied. Initial studies have demonstrated the viability of perovskite ferroelectrics for next-generation capacitor components.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: