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Memristor comprising film with comb-like structure of nanocolumns of metal oxide embedded in a metal oxide matrix

Patent ·
OSTI ID:1179223

Films having a comb-like structure of nanocolumns of Sm.sub.2O.sub.3 embedded in a SrTiO.sub.3 formed spontaneously on a substrate surface by pulsed laser deposition. In an embodiment, the nanocolumns had a width of about 20 nm with spaces between nanocolumns of about 10 nm. The films exhibited memristive behavior, and were extremely uniform and tunable. Oxygen deficiencies were located at vertical interfaces between the nanocolumns and the matrix. The substrates may be single-layered or multilayered.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-06NA25396
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Number(s):
9,029,985
Application Number:
14/282,910
OSTI ID:
1179223
Country of Publication:
United States
Language:
English

References (32)

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films journal January 2010
Two centuries of memristors journal May 2012
Observation of two resistance switching modes in TiO 2 memristive devices electroformed at low current journal May 2011
A scalable neuristor built with Mott memristors journal December 2012
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures journal July 2011
Origin of Colossal Ionic Conductivity in Oxide Multilayers: Interface Induced Sublattice Disorder journal March 2010
A ferroelectric memristor journal September 2012
Lowering the Temperature of Solid Oxide Fuel Cells journal November 2011
Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices journal August 2010
Exponential ionic drift: fast switching and low volatility of thin-film memristors journal November 2008
Nonvolatile Memory with Multilevel Switching: A Basic Model journal April 2004
Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches journal September 2011
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges journal July 2009
Colossal Ionic Conductivity at Interfaces of Epitaxial ZrO2:Y2O3/SrTiO3 Heterostructures journal August 2008
Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides journal April 2007
Low-Temperature Resistance Anomaly at SrTiO 3 Grain Boundaries: Evidence for an Interface-Induced Phase Transition journal November 2005
Ferroelectric Tunnel Memristor journal October 2012
Direct Determination of Grain Boundary Atomic Structure in SrTiO3 journal October 1994
Memristive devices for computing journal January 2013
The mechanism of electroforming of metal oxide memristive switches journal May 2009
STEM-EELS imaging of complex oxides and interfaces journal January 2012
Nanoionics-based resistive switching memories journal November 2007
The missing memristor found journal May 2008
A size-dependent nanoscale metal–insulator transition in random materials journal February 2011
Local Conduction at the BiFeO3-CoFe2O4 Tubular Oxide Interface journal July 2012
Memristive switching mechanism for metal/oxide/metal nanodevices journal June 2008
Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells journal March 2010
‘Memristive’ switches enable ‘stateful’ logic operations via material implication journal April 2010
Direct Identification of the Conducting Channels in a Functioning Memristive Device journal June 2010
Memory Metamaterials journal August 2009
Materials for fuel-cell technologies journal November 2001
Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory journal August 2011

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