Memristor comprising film with comb-like structure of nanocolumns of metal oxide embedded in a metal oxide matrix
Patent
·
OSTI ID:1179223
Films having a comb-like structure of nanocolumns of Sm.sub.2O.sub.3 embedded in a SrTiO.sub.3 formed spontaneously on a substrate surface by pulsed laser deposition. In an embodiment, the nanocolumns had a width of about 20 nm with spaces between nanocolumns of about 10 nm. The films exhibited memristive behavior, and were extremely uniform and tunable. Oxygen deficiencies were located at vertical interfaces between the nanocolumns and the matrix. The substrates may be single-layered or multilayered.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 9,029,985
- Application Number:
- 14/282,910
- OSTI ID:
- 1179223
- Country of Publication:
- United States
- Language:
- English
Similar Records
Formation of Well-defined Nanocolumns by Ion Tracking Lithography
Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy
Electron Accumulation Layers in InN Nanocolumns Studied by Raman Scattering
Conference
·
2003
·
OSTI ID:15007723
Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy
Journal Article
·
2007
· Applied Physics Letters
·
OSTI ID:20972005
Electron Accumulation Layers in InN Nanocolumns Studied by Raman Scattering
Journal Article
·
2010
· AIP Conference Proceedings
·
OSTI ID:21371407