Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

Choi, Woo Seok; Lee, Ho Nyung

doi:10.1103/PhysRevB.91.174101

Title: Strain tuning of electronic structure in Bi₄Ti₃O₁₂-LaCoO₃ epitaxial thin films

Journal Article · Fri May 08 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.91.174101· OSTI ID:1193186

Choi, Woo Seok ^[1]; Lee, Ho Nyung ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Sungkyunkwan Univ., Suwon (Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

In this study, we investigated the crystal and electronic structures of ferroelectric Bi₄Ti₃O₁₂ single-crystalline thin films site-specifically substituted with LaCoO₃ (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO₃ and SrTiO₃ substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t_2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1193186

Alternate ID(s):: OSTI ID: 1179192

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 91, Issue 17; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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