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Title: Ultratough single crystal boron-doped diamond

Abstract

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

Inventors:
 [1];  [1];  [1];  [1]
  1. Carnegie Inst. for Science, Washington, DC (United States)
Publication Date:
Research Org.:
Carnegie Institution of Washington, Washington, DC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1179032
Patent Number(s):
9,023,306
Application Number:
12/435,565
Assignee:
Carnegie Institution of Washington (Washington, DC) Y-12
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 May 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hemley, Russell J, Mao, Ho-Kwang, Yan, Chih-Shiue, and Liang, Qi. Ultratough single crystal boron-doped diamond. United States: N. p., 2015. Web.
Hemley, Russell J, Mao, Ho-Kwang, Yan, Chih-Shiue, & Liang, Qi. Ultratough single crystal boron-doped diamond. United States.
Hemley, Russell J, Mao, Ho-Kwang, Yan, Chih-Shiue, and Liang, Qi. Tue . "Ultratough single crystal boron-doped diamond". United States. https://www.osti.gov/servlets/purl/1179032.
@article{osti_1179032,
title = {Ultratough single crystal boron-doped diamond},
author = {Hemley, Russell J and Mao, Ho-Kwang and Yan, Chih-Shiue and Liang, Qi},
abstractNote = {The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Patent:

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Works referenced in this record:

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