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Title: Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well

Abstract

High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm 2/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions

Authors:
 [1];  [1];  [1];  [2];  [2];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. National Taiwan Univ., Taipei (Taiwan)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1177371
Report Number(s):
SAND2015-20732R
558181
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Shi, Xiaoyan, Lu, Tzu-Ming, Pan, Wei, Huang, S. H., Liu, C. W., and Li, J. Y. Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well. United States: N. p., 2015. Web. doi:10.2172/1177371.
Shi, Xiaoyan, Lu, Tzu-Ming, Pan, Wei, Huang, S. H., Liu, C. W., & Li, J. Y. Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well. United States. doi:10.2172/1177371.
Shi, Xiaoyan, Lu, Tzu-Ming, Pan, Wei, Huang, S. H., Liu, C. W., and Li, J. Y. Thu . "Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well". United States. doi:10.2172/1177371. https://www.osti.gov/servlets/purl/1177371.
@article{osti_1177371,
title = {Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well},
author = {Shi, Xiaoyan and Lu, Tzu-Ming and Pan, Wei and Huang, S. H. and Liu, C. W. and Li, J. Y.},
abstractNote = {High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm2/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions},
doi = {10.2172/1177371},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}

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