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Title: Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1176744
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4, 26 January 2015; Related Information: Article No. 043901
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Jiang, C. S., Contreras, M. A., Mansfield, L. M., Moutinho, H. R., Egaas, B., Ramanathan, K., and Al-Jassim, M. M.. Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films. United States: N. p., 2015. Web. doi:10.1063/1.4907165.
Jiang, C. S., Contreras, M. A., Mansfield, L. M., Moutinho, H. R., Egaas, B., Ramanathan, K., & Al-Jassim, M. M.. Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films. United States. doi:10.1063/1.4907165.
Jiang, C. S., Contreras, M. A., Mansfield, L. M., Moutinho, H. R., Egaas, B., Ramanathan, K., and Al-Jassim, M. M.. Mon . "Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films". United States. doi:10.1063/1.4907165.
@article{osti_1176744,
title = {Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films},
author = {Jiang, C. S. and Contreras, M. A. and Mansfield, L. M. and Moutinho, H. R. and Egaas, B. and Ramanathan, K. and Al-Jassim, M. M.},
abstractNote = {},
doi = {10.1063/1.4907165},
journal = {Applied Physics Letters},
number = 4, 26 January 2015,
volume = 106,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 2015},
month = {Mon Jan 26 00:00:00 EST 2015}
}